Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kogo Sato"'
Publikováno v:
Solid-State Electronics. 21:513-518
Heavily arsenic implanted silicon layers are evaluated by measuring the “refreshtime” of dynamic type MOS memories. The dose range used for the fabrication is around 1.5×10 16 cm −2 due to the sheet resistivity and junction depth requirements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ddd1aa1e39f20f343248225889e3298
https://doi.org/10.1016/0038-1101(78)90020-5
https://doi.org/10.1016/0038-1101(78)90020-5
Publikováno v:
Solid-State Electronics. 9:771-781
From i.r. interference chart analysis of an epitaxial wafer made of silicon nn+ layers, it wasfound that: (a) the interference amplitude varies sensitively with impurity concentration of the substrate wafers; (b) the interference amplitude damps and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df9eac2937105d87bf761bd4c00cdf06
https://doi.org/10.1016/0038-1101(66)90117-1
https://doi.org/10.1016/0038-1101(66)90117-1
Autor:
Kogo Sato, Masami Tomono
Publikováno v:
Solid-State Electronics. 3:29-IN5
The emitter-current dependence of α cb of the p-n-p alloy transistor is affected by various factors. One of the important factors at low emitter-current densities is the ratio between donor concentration in base region and acceptor concentration in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74231f8c0ef68de9f88f98ed9b6bb025
https://doi.org/10.1016/0038-1101(61)90077-6
https://doi.org/10.1016/0038-1101(61)90077-6
Autor:
Mariko Kogo, Susumu Sato, Shigeo Muro, Hisako Matsumoto, Natsuko Nomura, Tsuyoshi Oguma, Hironobu Sunadome, Tadao Nagasaki, Kimihiko Murase, Takahisa Kawaguchi, Yasuharu Tabara, Fumihiko Matsuda, Kazuo Chin, Toyohiro Hirai
Publikováno v:
Annals of the American Thoracic Society; Nov2023, Vol. 20 Issue 11, p1578-1586, 9p
This book provides an overview of the growing field of screenwriting research and is essential reading for both those new to the field and established screenwriting scholars. It covers topics and concepts central to the study of screenwriting and the
