Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Koen Reynders"'
Publikováno v:
IEEE Transactions on Electron Devices. 52:1008-1013
On-wafer transmission line pulsing (TLP) measurements and transient interferometric mapping experiments on vertically integrated DMOS transistors reveal the presence of hot filament hopping between the two parasitic bipolars. The activity of both int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9ec0f2f25347ab2c0f6bd33e04cc746
https://doi.org/10.1109/ted.2005.846331
https://doi.org/10.1109/ted.2005.846331
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
The paper presents a high voltage power supply ESD protection element containing a high voltage VDMOS which is designed to survive bipolar snapback. For low currents, it operates as an "active clamp", and for high currents, the parasitic vertical bip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d3fb2bbf4475725538a14ba9c5c0419
https://doi.org/10.1109/relphy.2005.1493167
https://doi.org/10.1109/relphy.2005.1493167
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
The effects of hot spot hopping and drain ballasting are investigated in vertical DMOS devices under ESD stress. The frequency of the hot spot hopping between two neighboring channels of the device is shown to be dependent on the dose of the n-type b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9f52dd696394a7f73e99e629063e371
https://doi.org/10.1109/relphy.2004.1315358
https://doi.org/10.1109/relphy.2004.1315358
Autor:
A. Konrad, Wolfgang Stadler, Heinrich Wolf, M. Frank, N. Qu, Antonio Andreini, H. Gieser, M. Etherton, Kai Esmark, Dionyz Pogany, M. Graf, E. Morena, D. Nuernbergk, J. Willemen, Erich Gornik, M.I. Natarajan, Roberto Stella, Guido Groeseneken, S. Mettler, W. Soppa, Koen Reynders, C. Foss, Wolfgang Wilkening, V. De Heyn, Martin Litzenberger, Mahmud Zubeidat
Publikováno v:
Scopus-Elsevier
CDM hardening during the development of technology, devices, libraries and finally products differs significantly from the process well-established for HBM. This paper introduces a method on the basis of specialized CDM test structures including prot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09f3cf6d90161de43a84831208a0184d
http://www.scopus.com/inward/record.url?eid=2-s2.0-84945206068&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-84945206068&partnerID=MN8TOARS
Publikováno v:
Physics in Medicine & Biology; 10/7/2023, Vol. 68 Issue 19, p1-19, 19p
Publikováno v:
2005 Electrical Overstress/Electrostatic Discharge Symposium; 2005, p1-32, 32p
Publikováno v:
2002 Electrical Overstress/Electrostatic Discharge Symposium; 2002, p1-27, 27p
Publikováno v:
IEEE Transactions on Electron Devices; May2005, Vol. 52 Issue 5, p1008-1013, 6p