Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Koen Marrant"'
Autor:
Marianna Pantouvaki, Gerald Beyer, Hugo Bender, Koen Marrant, Farid Sebaai, Alain Moussa, Herbert Struyf, J. Versluijs, Bart Vereecke, Danny Goossens, Rudy Caluwaerts, Els Van Besien, Kristof Kellens
Publikováno v:
Microelectronic Engineering. 88:1618-1622
Scaling air-gap interconnects to 70nm pitch is demonstrated for the first time by combining air-gap technology (SiO"2 etch-back and non-conformal CVD) and the double patterning approach. A capacitance reduction of 45% was measured on the air-gaps com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce5eecff7311146a25f38bcd1dc537eb
https://doi.org/10.1016/j.mee.2011.03.006
https://doi.org/10.1016/j.mee.2011.03.006
Autor:
Koen Marrant, Roger Sonnemans, Hugo Bender, Erik Rosseel, Geert Mannaert, Jozefien Goosens, Janusz Bogdanowicz, D. Radisic, Denis Shamiryan, Ivan Berry, Werner Boullart
Publikováno v:
ECS Transactions. 25:367-374
Spectroscopic ellipsometry (SE) model was developed to study substrate loss of shallow implanted silicon substrate following photoresist strip. Model is based on different optical properties of silicon oxide (SiO2) and implanted silicon (i-Si) layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a0cc7e3ae3eeb98df72f6ae40027f7f
https://doi.org/10.1149/1.3202675
https://doi.org/10.1149/1.3202675
Autor:
Hugo Bender, Jozefien Goossens, Janusz Bogdanowicz, Werner Boullart, Koen Marrant, Roger Sonnemans, D. Radisic, Geert Mannaert, Eveline Rosseel, Ivan Berry, Denis Shamiryan
Publikováno v:
Journal of The Electrochemical Society. 157:H580
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4361d51ee8a60ac0a5eea65f160a2283
https://doi.org/10.1149/1.3353199
https://doi.org/10.1149/1.3353199