Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Kodzhespirova I. F."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 53-56 (2010)
A simple method for the determination of the concentration of vacant deep traps in the vicinity of the «film — substrate» interface is proposed. The method is based on determining the increase in the width of the conducting channel under extrinsi
Externí odkaz:
https://doaj.org/article/6eb4ee01d9884831817b99217dfb797e
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 25-28 (2009)
It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV) at the
Externí odkaz:
https://doaj.org/article/76d5cd3eeaa9486daaa694778a2b90fb
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 52-54 (2008)
A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these str
Externí odkaz:
https://doaj.org/article/0056b8a696854f4ba82e125e11b8579f
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 3-5 (2007)
It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic. A method for pr
Externí odkaz:
https://doaj.org/article/b797d1c97ad64f2d8f44c0e7c5793b5d
Publikováno v:
Radioelectronics & Communications Systems; Apr2022, Vol. 65 Issue 4, p177-185, 9p
Publikováno v:
Radioelectronics and Communications Systems; Том 62, № 12 (2019); 630-641
The paper considers the problem of determining the eigenfrequencies of biconical cavity making it possible to simplify the eigenfrequency-based design of devices. We used the solving of the excitation problem for biconical cavity using the method of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::6839cbf6e5822b99bc9d6de2e70e6474
http://radioelektronika.org/article/view/S0735272719120033
http://radioelektronika.org/article/view/S0735272719120033
Publikováno v:
Radioelectronics and Communications Systems; Том 60, № 12 (2017); 555-561
A number of features of biconical cavities make them attractive for various applications. Expressions for the calculation of the eigenfrequencies of a biconical cavity with large cone angles can be derived using the overlapping domain decomposition m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::1092c9acc036fd00638b6f82e2594fa4
http://radioelektronika.org/article/view/S0735272717120056
http://radioelektronika.org/article/view/S0735272717120056
Akademický článek
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Publikováno v:
2016 II International Young Scientists Forum on Applied Physics & Engineering (YSF); 2016, p69-72, 4p
Publikováno v:
2016 XXIst International Seminar/Workshop on Direct & Inverse Problems of Electromagnetic & Acoustic Wave Theory (DIPED); 2016, p24-29, 6p