Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Kociniewski, T."'
Publikováno v:
In Microelectronics Reliability November 2020 114
Publikováno v:
In Microelectronics Reliability February 2020 105
Autor:
Hoummada, K., Dahlem, F., Kociniewski, T., Boulmer, J., Dubois, C., Prudon, G., Bustarret, E., Courtois, H., Debarre, D., Mangelinck, D.
Publikováno v:
Appl. Phys. Lett. 101, 182602 (2012)
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline s
Externí odkaz:
http://arxiv.org/abs/1103.4409
Autor:
Dahlem, F., Kociniewski, T., Marcenat, C., Grockowiak, A., Pascal, L., Achatz, P., Boulmer, J., Debarre, D., Klein, T., Bustarret, E., Courtois, H.
Publikováno v:
Phys. Rev. B 82, 140505(R) (2010)
Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting local differential conductance behaved as expected for a homogeneous
Externí odkaz:
http://arxiv.org/abs/1007.3598
Autor:
Marcenat, C., Kacmarcik, J., Piquerel, R., Achatz, P., Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Bustarret, E., Ortega, L., Klein, T., Boulmer, J., Kociniewski, T., Debarre, D.
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of
Externí odkaz:
http://arxiv.org/abs/0910.5378
Autor:
Stenger, I., Pinault-Thaury, M.-A., Lusson, A., Kociniewski, T., Jomard, F., Chevallier, J., Barjon, J.
Publikováno v:
In Diamond & Related Materials April 2017 74:24-30
Publikováno v:
In Applied Surface Science 15 September 2012 258(23):9228-9232
Autor:
Vincent, L., Fossard, F., Kociniewski, T., Largeau, L., Cherkashin, N., Hÿtch, M.J., Debarre, D., Sauvage, T., Claverie, A., Boulmer, J., Bouchier, D.
Publikováno v:
In Applied Surface Science 15 September 2012 258(23):9208-9212
Publikováno v:
In Thin Solid Films 2010 518(9):2542-2545
Publikováno v:
In Physica B: Physics of Condensed Matter 2007 401:51-56