Zobrazeno 1 - 10
of 651
pro vyhledávání: '"Koch, Stephan"'
Autor:
Laurain, Alexandre, Marah, Declan, Rockmore, Robert, McInerney, John G., Hader, Jorg, Ruiz Perez, Antje, Koch, Stephan W., Stolz, Wolfgang, Moloney, Jerome V.
We present a passive and robust mode-locking scheme for a Vertical External Cavity Surface Emitting Laser (VECSEL). We placed the semiconductor gain medium and the semiconductor saturable absorber mirror (SESAM) strategically in a ring cavity to prov
Externí odkaz:
http://hdl.handle.net/10150/625500
http://arizona.openrepository.com/arizona/handle/10150/625500
http://arizona.openrepository.com/arizona/handle/10150/625500
A dual-wavelength mode-locked semiconductor vertical-external-cavity-surface-emitting laser is demonstrated. A semiconductor saturable absorber mirror allows for simultaneous mode locking of pulses centered at two center wavelengths with variable fre
Externí odkaz:
http://hdl.handle.net/10150/621738
http://arizona.openrepository.com/arizona/handle/10150/621738
http://arizona.openrepository.com/arizona/handle/10150/621738
Fully microscopic many-body models based on inputs from first principle density functional theory are used to calculate the carrier losses due to radiative- and Auger-recombinations in bulk tellurium. It is shown that Auger processes dominate the los
Externí odkaz:
http://arxiv.org/abs/2208.05532
Autor:
Koch, Stephan
Die vorliegende Arbeit befasst sich mit der numerischen Berechnung elektromagnetischer Felder in der quasistatischen Näherung. Diese ist für viele in der Praxis anzutreffende Problemstellungen zulässig. Der Schwerpunkt liegt dabei auf der Anwendun
Autor:
Fuchs, Christian, Limame, Imad, Reinhard, Stefan, Lehr, Jannik, Hader, Jörg, Moloney, Jerome V., Bäumner, Ada, Koch, Stephan W., Stolz, Wolfgang
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates for improv
Externí odkaz:
http://arxiv.org/abs/2012.10996
Autor:
Fuchs, Christian, Baeumner, Ada, Brueggemann, Anja, Berger, Christian, Moeller, Christoph, Reinhard, Stefan, Hader, Joerg, Moloney, Jerome V., Koch, Stephan W., Stolz, Wolfgang
This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied to discuss
Externí odkaz:
http://arxiv.org/abs/2012.01522
The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) with Bi concentrations below $10 \%$, it is shown that this method works
Externí odkaz:
http://arxiv.org/abs/2008.04771
Autor:
Schneider, Lorenz Maximilian, Kuhnert, Jan, Schmitt, Simon, Heimbrodt, Wolfram, Huttner, Ulrich, Meckbach, Lars, Stroucken, Tineke, Koch, Stephan W., Fu, Shichen, Wang, Xiaotian, Kang, Kyungnam, Yang, Eui-Hyeok, Rahimi-Iman, Arash
Valley-selective optical selection rules and a spin-valley locking in transition-metal dichalcogenide (TMDC) monolayers are at the heart of "valleytronic physics", which exploits the valley degree of freedom and has been a major research topic in rec
Externí odkaz:
http://arxiv.org/abs/1905.02814
Autor:
Meckbach, Lars, Hader, Jörg, Neuhaus, Josefine, Huttner, Ulrich, Steiner, Johannes, Stroucken, Tineke, Moloney, Jerry V., Koch, Stephan W.
Publikováno v:
Phys. Rev. B 101, 075401 (2020)
The dynamics of band-gap renormalization and gain build-up in monolayer MoTe$_2$ is investigated by evaluating the non-equilibrium Dirac-Bloch equations with the incoherent carrier-carrier and carrier-phonon scattering treated via quantum-Boltzmann t
Externí odkaz:
http://arxiv.org/abs/1903.08553
A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offset
Externí odkaz:
http://arxiv.org/abs/1901.00667