Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Kobelt, Ines"'
Autor:
Schimmel, Saskia, Kobelt, Ines, Heinlein, Lukas, Kimmel, Anna-Carina L., Steigerwald, Thomas G., Schlücker, Eberhard, Wellmann, Peter
Publikováno v:
Crystals, Vol 10, Iss 723, p 723 (2020)
Crystals
Volume 10
Issue 9
Crystals
Volume 10
Issue 9
A variety of functional nitride materials, including the important wide bandgap semiconductor GaN, can be crystallized in exceptionally good structural quality by the ammonothermal method. However, the further development of this method is hindered b