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pro vyhledávání: '"Ko-Li Lin"'
Publikováno v:
IEEE Transactions on Electron Devices. 63:4998-5003
In this paper, the junctionless (JL) ultrathin polycrystalline-Si (poly-Si) nanowire (NW) transistors with gate-all-around configuration and raised source/drain were successfully fabricated by a low-temperature trimming process. The 140 °C-heated ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86f98311c48a5bcdbf40a1840e6cbae6
https://doi.org/10.1109/ted.2016.2615805
https://doi.org/10.1109/ted.2016.2615805
