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pro vyhledávání: '"Ko-Chin Hsu"'
Autor:
Ko-Chin Hsu, 許克勤
105
In the recent year, mobile devices are very prevalent. The off-state current of these device is very important to keep the long-time operation. In this study, we focus on the off-state leakage. This thesis is separated into two parts. First
In the recent year, mobile devices are very prevalent. The off-state current of these device is very important to keep the long-time operation. In this study, we focus on the off-state leakage. This thesis is separated into two parts. First
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/338dr6
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
The off-state current of MOSFETs under 28nm-node or beyond seems more important than before to keep the long-time operation for mobile electronic products. In this study, we focus on two parts to expose the off-state current behaviors for 28nm nMOSFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c57e6405b4ecee5562ccd59f123b81
https://doi.org/10.1109/isne.2018.8394643
https://doi.org/10.1109/isne.2018.8394643
Publikováno v:
2017 6th International Symposium on Next Generation Electronics (ISNE).
One interesting result for 28nm high-k stacked n-channel MOSFET with W/L= 0.5/0.12 (μm/μm) electrically sensed demonstrates the tunneling and GIDL effects which can effectively be decoupled by gate bias at accumulation mode. Due to the drain bias a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75b734c6a59a7535f2800470bad393fe
https://doi.org/10.1109/isne.2017.7968706
https://doi.org/10.1109/isne.2017.7968706