Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Knut Stahrenberg"'
Autor:
Ralf Rudolf, Nicolas Nagel, Marko Lemke, Rolf Wei, Martin Bartels, Thomas Bertrams, Knut Stahrenberg, Marco Müller, Ahmed Mahmoud
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Over decades the usage of the charge compensation principle for power devices has improved the performance and efficiency of typical applications in almost all voltage classes like power supplies, converters and drives. Different types of charge comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cc78211c3c265ef2aba81242611a86b
https://doi.org/10.1109/ispsd.2019.8757604
https://doi.org/10.1109/ispsd.2019.8757604
Here, silicon oxide was formed in a U-shaped trench of a power metal-oxide semiconductor field-effect transistor device by various processes. One SiO2 formation process was performed in multiple steps to create a low-defect Si-SiO2 interface, where f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::446af7f9399978fcd4f81a8e2da4b3fa
https://tud.qucosa.de/id/qucosa:81137
https://tud.qucosa.de/id/qucosa:81137
Autor:
Cory E. Weber, E. Ruderer, Knut Stahrenberg, Doris Schmitt-Landsiedel, Walter Hansch, A. Huber, R. Heinrich, U. Schaper, Georg Georgakos, U. Feldmann, S. Henzler, J. Einfeld, M. Fulde, Th. Nirschl, J. Sedlmeir, A. Bargagli-Stoffi, R. Kakoschke, R. Neubert, M. Sterkel, J. Fischer
Publikováno v:
Solid-State Electronics. 50:44-51
The scaling properties of the tunneling field effect transistor (TFET) are shown using standard 130 nm, 90 nm, and 65 nm CMOS process flows. For the different technology nodes the temperature dependence is presented. The device characteristic does no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7853f5f3dbbe68f1ecde6440fb5f54d2
https://doi.org/10.1016/j.sse.2005.10.045
https://doi.org/10.1016/j.sse.2005.10.045
Autor:
Andreas Pribil, Knut Stahrenberg, Cajetan Wagner, Axel Junge, Claus Dahl, Armin Tilke, Bernd Föste, J. Berkner, Martin Tegeler, Markus Rochel, Jörg Wiedemann, Steffen Rothenhäußer, Klaus Goller
Publikováno v:
Solid-State Electronics. 48:2243-2249
We present a modular 0.25 μm ASIC-compatible, double-poly self-aligned BiCMOS technology comprising either an implanted-base 45 GHz bipolar transistor or a 80 GHz-HBT with selective SiGe-epitaxy. All passive devices for RF-design are integrated, inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee0ed18afae92067ae290f0ad971fac
https://doi.org/10.1016/j.sse.2004.04.014
https://doi.org/10.1016/j.sse.2004.04.014
Autor:
Armin Tilke, Jörg Wiedemann, S. Rothenhausser, Claus Dahl, Knut Stahrenberg, Cajetan Wagner, M. Rochel, J. Berkner
Publikováno v:
IEEE Transactions on Electron Devices. 51:1101-1107
We present a low-cost concept for a self-aligned SiGe heterojunction bipolar transistor (HBT). In conventional double-poly HBTs, the base link is formed by use of a sacrificial layer to grow the SiGe epitaxy between an external base polysilicon and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25ffefc13218379a5339f8af0541a146
https://doi.org/10.1109/ted.2004.829879
https://doi.org/10.1109/ted.2004.829879
Autor:
R. Divakaruni, Jaeger Daniel, Richard A. Wachnik, N-S. Kim, M. Celik, Y. Takasu, J. Sudijono, S. Mori, Melanie J. Sherony, H. Nishimura, Michael P. Chudzik, K-C. Lee, Y-W. Teh, Liyang Song, Ricardo A. Donaton, J.-P. Han, E. Kaste, T. Iwamoto, Knut Stahrenberg, Vijay Narayanan, J. Liang, Fumiyoshi Matsuoka, Manfred Eller, S. Kohler, K. Kim, JiYeon Ku, Katsura Miyashita, M-H. Na, S. Johnson, Wai-kin Li, Jongpal Kim, H. V. Meer, Christophe Bernicot, Ron Sampson, Deleep R. Nair, Franck Arnaud, M. Sekine, W. Neumueller, S. Miyake, Masafumi Hamaguchi, Kathy Barla, J.H. Park, H. Kothari
Publikováno v:
2011 International Electron Devices Meeting.
We report a new N/PFET Gate Patterning Boundary Proximity layout dependent effect in high-k dielectric/Metal Gate (HK/MG) MOSFETs which causes anomalous threshold voltage (V t ) modulation for the first time. We investigated the mechanism by using sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6c4ef6fa05863728895d8e57c28c48a
https://doi.org/10.1109/iedm.2011.6131614
https://doi.org/10.1109/iedm.2011.6131614
Autor:
Melanie J. Sherony, J. Liang, M. Voelker, Myung-Hee Na, Jaeger Daniel, Kathy Barla, Y. Goto, G. Yang, Katsura Miyashita, Frank Scott Johnson, J.H. Park, R. Sampson, Jenny Lian, Kenneth J. Stein, JiYeon Ku, Christophe Bernicot, Knut Stahrenberg, S. Miyake, J. Sudijono, Haoren Zhuang, Li-Hong Pan, Ricardo A. Donaton, Martin Ostermayr, Gen Tsutsui, Manfred Eller, Richard A. Wachnik, S. Kohler, K. Kim, Wai-kin Li, Christian Wiedholz, M. Celik, Atsushi Azuma, An L. Steegen, T. Shimizu, Anda Mocuta, J.-P. Han, E. Kaste, H. van Meer, Masafumi Hamaguchi, Deleep R. Nair, N-S. Kim, Franck Arnaud, W. Neumueller, D. Chanemougame
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ced71a741b8bf85c300152efdb2927b
https://doi.org/10.7567/ssdm.2010.c-6-5l
https://doi.org/10.7567/ssdm.2010.c-6-5l
Autor:
Frank Scott Johnson, Moritz Voelker, Muhsin Celik, An L. Steegen, Kenneth J. Stein, Katsura Miyashita, Anda Mocuta, Deleep R. Nair, Shinich Miyake, Gen Tsutsui, Li-Hong Pan, Knut Stahrenberg, Sadaharu Uchimura, Melanie J. Sherony, Jae Hoo Park, Martin Ostermayr, Christian Wiedholz, Richard A. Wachnik, Myung-Hee Na, Jin-Ping Han, Ed Kaste, Franck Arnaud, T. Shimizu, Jaeger Daniel, W. Neumueller, Haoren Zhuang, Ja-hum Ku, Ricardo A. Donaton, Christophe Bernicot, Atsushi Azuma, Nam-Sung Kim, Yoshiro Goto, Kathy Barla, Kisang Kim, Manfred Eller, Jenny Lian, Ron Sampson, H. V. Meer, Sabrina Kohler, D. Chanemougame, Masafumi Hamaguchi, Jewel Liang, Weipeng Li, Guoyong Yang, J. Sudijono
Publikováno v:
Japanese Journal of Applied Physics. 50:04DC13
High performance analog (HPA) devices in high-k metal gate (HKMG) scheme with innovative halo engineering have been successfully demonstrated to produce superior analog and digital performance for low power applications. HPA device was processed “f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::633690ed1b71724230ec0aee8db5bd18
https://doi.org/10.1143/jjap.50.04dc13
https://doi.org/10.1143/jjap.50.04dc13
Autor:
Jin-Ping Han, Takashi Shimizu, Li-Hong Pan, Moritz Voelker, Christophe Bernicot, Franck Arnaud, Anda Mocuta, Knut Stahrenberg, Atsushi Azuma, Manfred Eller, Guoyong Yang, Daniel Jaeger, Haoren Zhuang, Katsura Miyashita, Kenneth Stein, Deleep Nair, Jae Hoo Park, Sabrina Kohler, Masafumi Hamaguchi, Weipeng Li, Kisang Kim, Daniel Chanemougame, Nam Sung Kim, Sadaharu Uchimura, Gen Tsutsui, Christian Wiedholz, Shinich Miyake, Hans van Meer, Jewel Liang, Martin Ostermayr, Jenny Lian, Muhsin Celik, Ricardo Donaton, Kathy Barla, MyungHee Na, Yoshiro Goto, Melanie Sherony, Frank S. Johnson, Richard Wachnik, John Sudijono, Ed Kaste, Ron Sampson, Ja-Hum Ku, An Steegen, Walter Neumueller
Publikováno v:
Japanese Journal of Applied Physics. 50:04DC13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb44d9ad34edcdba753466fee387fd41
https://doi.org/10.7567/jjap.50.04dc13
https://doi.org/10.7567/jjap.50.04dc13