Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Knut Gottfried"'
Autor:
Roman Forke, Karla Hiller, Susann Hahn, Alexey Shaporin, Sebastian Weidlich, Daniel Bulz, Matthias Kuchler, Danny Reuter, Christian Helke, Dirk Wunsch, Knut Gottfried, Harald Kuhn
Publikováno v:
2022 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL).
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A novel method for selective deposition of metal features has been developed and evaluated for several different metallization applications in device manufacturing and advanced packaging technologies. Selectroplating® is based on a selective chemica
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
Thin film deposition of metals is necessary in the fabrication sequence of most electronic devices, but much of the deposited metal is actually wasted in the subsequent patterning steps. In the case of copper interconnects for advanced semiconductor
Autor:
Knut Gottfried, Holger Wachsmuth, Barrie VanDevender, Mathias Franz, Dan Trojan, Catharina Rudolph, Peter Wrschka, Romy Junghans, Ina Schubert, Ronny Martinka
Publikováno v:
ECS Transactions. 72:17-24
Chemical Mechanical Planarization is more than ever a key technology, not only in advanced CMOS fabrication but also in emerging areas like the “Internet Of Things” (IOT). Whereas lower nm-CMOS-nodes require a perfect process control with nearly
Publikováno v:
Microelectronic Engineering. 106:85-90
This paper investigates the influence of CH"4, NH"3, H"2 and He plasma on properties of porous low-k film and its effects on resisting moisture absorption during CMP and ions penetration from sputtering. It is found that the H"2, He, NH"3 plasma can
Autor:
Danny Reuter, Lutz Hofmann, Knut Gottfried, Stefan E. Schulz, Ramona Ecke, Thomas Geßner, Sophia Dempwolf, Roy Knechtel
Publikováno v:
SPIE Proceedings.
Technologies for the 3D integration are described within this paper with respect to devices that have to retain a specific minimum wafer thickness for handling purposes (CMOS) and integrity of mechanical elements (MEMS). This implies Through-Silicon
Publikováno v:
Microelectronic Engineering. 83:2218-2224
Dielectric stacks containing porous low-k materials were investigated regarding their ability to pass CMP processes as used in Cu interconnect technology. Beside the low-k material itself, the impact of layout, cap layer materials and different diffu
Publikováno v:
MTZ - Motortechnische Zeitschrift. 63:400-409
Mit dem vorgestellten Sensor ist die Vollstrommessung von CO, THC und NOx unmittelbar im Abgasstrang von Kraftfahrzeugen moglich. Das Messsystem besteht aus einem Titanoxidgassensorarray und der Mess-, Steuer- und Auswerteelektronik. Es erfolgten umf
Autor:
M. Juergen Wolf, Wolfram Steller, Knut Gottfried, Wolfgang Gunther, K. Dieter Lang, Christoph Meinecke, Gregor Woldt
Publikováno v:
2014 IEEE 64th Electronic Components and Technology Conference (ECTC).
The applications of inertial sensors have a wide variety in terms of accuracy and costs. A new technology approach is joining higher sensor accuracy and lower production costs by using a new Interposer / sensor interconnect technology applied on 300
Autor:
C. Kaufmann, G. Springer, Thomas Gessner, B. Zimmermann, M. Vogel, E. Charetdinov, Knut Gottfried, Peter Hauptmann, U. Dietel, R. Hoffmann, Ralf Lucklum, U. Weiss
Publikováno v:
Microsystem Technologies. 6:169-174
The present study is focused on the development of a gas sensor for application in a high temperature environment. The sensor has been realised using thin films prepared on silicon substrates including a high temperature stable heating and wiring sys