Zobrazeno 1 - 10
of 413
pro vyhledávání: '"Knoch, J."'
Autor:
Icking, E., Emmerich, D., Watanabe, K., Taniguchi, T., Beschoten, B., Lemme, M. C., Knoch, J., Stampfer, C.
Publikováno v:
Nano Letters 24, 11454 (2024)
Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power cons
Externí odkaz:
http://arxiv.org/abs/2408.01111
Autor:
Steuer, O., Michailow, M., Hübner, R., Pyszniak, K., Turek, M., Kentsch, U., Ganss, F., Khan, M. M., Rebohle, L., Zhou, S., Knoch, J., Helm, M., Cuniberti, G., Georgiev, Y. M., Prucnal, S.
Publikováno v:
Journal of Applied Physics; 8/14/2024, Vol. 136 Issue 6, p1-9, 9p
Publikováno v:
In Micro and Nano Engineering December 2024 25
In this paper, we propose a THz probe technique to obtain spatially resolved information about the electronic spectra inside nanowire-based FETs. This spectroscopic approach employs a segmented multi-gate design for the local detection of quantum tra
Externí odkaz:
http://arxiv.org/abs/0706.1417
Publikováno v:
Phys. Rev. B 74, 113310 (2006)
With the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond the scope of a selfconsistent mean-field description. From the simulate
Externí odkaz:
http://arxiv.org/abs/cond-mat/0604247
Publikováno v:
Phys. Rev. B 72, 125308 (2005)
In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approac
Externí odkaz:
http://arxiv.org/abs/cond-mat/0504746
We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant range (-1.3
Externí odkaz:
http://arxiv.org/abs/cond-mat/0402350
Autor:
Marx, M., Nordmann, S., Knoch, J., Franzen, C., Stampfer, C., Andrzejewski, D., Kümmell, T., Bacher, G., Heuken, M., Kalisch, H., Vescan, A.
Publikováno v:
In Journal of Crystal Growth 15 April 2017 464:100-104
Autor:
Nordmann, S., Berghoff, B., Hessel, A., Wilck, N., Osullivan, B., Debucquoy, M., John, J., Starschich, S., Knoch, J.
Publikováno v:
In Renewable Energy August 2016 94:90-95
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