Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS

Autor: Knežević, Tihomir, Brodar, Tomislav, Radulović, Vladimir, Snoj, Luka, Makino, Takahiro, Capan, Ivana

We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, Ec-0.4eV and Ec-0.7eV. They were previously assigned to carbon intersti

Externí odkaz: http://arxiv.org/abs/2208.11578

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4H-SiC Schottky barrier diodes as radiation detectors: A role of Schottky contact area

Autor: Capan, Ivana, Bernat, Robert, Makino, Takahiro, Knežević, Tihomir

Publikováno v: In Diamond & Related Materials August 2023 137

PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility

Autor: Thammaiah, Shivakumar D., Liu, Xingyu, Knežević, Tihomir, Batenburg, Kevin M., Aarnink, A.A.I., Nanver, Lis K.

Publikováno v: In Solid State Electronics March 2021 177

Optical detectors

Autor: Nanver, Lis, Kneževic, Tihomir, Chen, An

Publikováno v: Advances in Semiconductor Technologies: Selected Topics Beyond Conventional CMOS, 211-229
STARTPAGE=211;ENDPAGE=229;TITLE=Advances in Semiconductor Technologies

In the context of More than Moore (MtM), an overview is given of optical detectors that are either commercially available today or in advanced development. Focus is placed on the integration in or with complementary metal-oxide-semiconductor (CMOS) t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c54794bb78fcf1ad57a529dd7b6c9572
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