Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Klyachkin Leonid"'
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 14, Iss 4 (2021)
In order to determine the possibility of the phase control of terahertz (THz) radiation from silicon negative-U nanosandwich structures (NSS), as well as to describe the relationship of optical and electrical characteristics of these NSS, the room-te
Externí odkaz:
https://doaj.org/article/37e2a6d8f30040c586d5f18c2a74d1f7
Autor:
Chernev, Andrey L., Bagraev, Nicolay T., Klyachkin, Leonid E., Emelyanov, Anton K., Dubina, Michael V.
Our results demonstrate a new method for label-free, real-time oligonucleotide characterisation by their self-resonant modes, which are unique to their conformation and sequence. We anticipate that our assay will be used as a starting point for a mor
Externí odkaz:
http://arxiv.org/abs/1407.6520
Autor:
Bagraev, Nikolay, Danilovskii, Eduard, Gehlhoff, Wolfgang, Gets, Dmitrii, Klyachkin, Leonid, Kudryavtsev, Andrey, Kuzmin, Roman, Malyarenko, Anna, Mashkov, Vladimir, Romanov, Vladimir
We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor delta-barriers. This technique a
Externí odkaz:
http://arxiv.org/abs/1308.5082
Nanoscale silicon p(+)-n junctions with very high concentration of boron, 5 10^21 cm-3, are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree of the li
Externí odkaz:
http://arxiv.org/abs/1308.5083
Autor:
Bagraev, Nikolay, Danilovskii, Eduard, Gehlhoff, Wolfgang, Klyachkin, Leonid, Kudryavtsev, Andrey, Malyarenko, Anna, Mashkov, Vladimir
We present the findings of the studies of the silicon sandwich nanostructure that represents the high mobility ultra - narrow silicon quantum well of the p - type (Si - QW), 2 nm, confined by the delta - barriers, 3 nm, heavily doped with boron on th
Externí odkaz:
http://arxiv.org/abs/1308.5078
Autor:
Bagraev, Nikolay, Danilovskii, Eduard, Gets, Dmitrii, Kalabukhova, Ekaterina, Klyachkin, Leonid, Malyarenko, Anna, Savchenko, Dariya, Shanina, Bella
We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-n
Externí odkaz:
http://arxiv.org/abs/1308.5073
Autor:
Bagraev, Nikolay, Danilovsky, Eduard, Gets, Dmitrii, Klyachkin, Leonid, Kudryavtsev, Andrey, Kuzmin, Roman, Malyarenko, Anna, Mashkov, Vladimir
We present the first findings of the circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron. The CPEL dependenc
Externí odkaz:
http://arxiv.org/abs/1104.4975
We present the new optically-detected magnetic resonance (ODMR) technique which reveals single point defects in silicon quantum wells embedded in microcavities within frameworks of the excitonic normal-mode coupling (NMC) without the external cavity
Externí odkaz:
http://arxiv.org/abs/0910.3864
Autor:
Bagraev, Nikolay T., Gehlhoff, Wolfgang, Klyachkin, Leonid E., Malyarenko, Anna M., Romanov, Vladimir V., Rykov, Serguey A.
We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron of the n - type Si (100) surface. These Si - based nanostructures represent the p - type ultra-narrow self - assembled silicon qu
Externí odkaz:
http://arxiv.org/abs/cond-mat/0510726
Publikováno v:
In Modern Electronic Materials March 2017 3(1):40-49