Flip-chip-integrated silicon nitride ECL at 640nm with relaxed alignment tolerances

Autor: Kluge, Ines, Schulten, Michael, Tabatabaei Mashayekh, Seyed Alireza, Rodrigo, Rebecca, Ackermann, Manuel Franz, Ghannam, Ibrahim Abdel-Aziz Moh'd, Stassen, Andim, Merget, Florian, Leisching, Patrick, Witzens, Jeremy

Publikováno v: Bellingham, Washington, USA : SPIE, Proceedings of SPIE / SPIE volume 12006, 9 Seiten (2022). doi:10.1117/12.2607615
Silicon Photonics XVII : 22-27 January 2022, San Francisco, California, United States : 20-24 February 2022, online / Graham T. Reed, Andrew P. Knights (editors) ; sponsored and published by: SPIE
Silicon Photonics XVII : 22-27 January 2022, San Francisco, California, United States : 20-24 February 2022, online / Graham T. Reed, Andrew P. Knights (editors) ; sponsored and published by: SPIESilicon Photonics XVII, SPIE OPTO 2022, San Francisco, CA, USA, 2022-01-22-2022-02-28

Silicon Photonics XVII : 22-27 January 2022, San Francisco, California, United States : 20-24 February 2022, online / Graham T. Reed, Andrew P. Knights (editors) ; sponsored and published by: SPIE Silicon Photonics XVII, SPIE OPTO 2022, San Francisco

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0c4c569a1b8468fe5d8123e33c1792f
https://doi.org/10.1117/12.2607615

Flip-chip-integrated silicon nitride ECL at 640nm with relaxed alignment tolerances.

Autor: Kluge, Ines, Schulten, Michael, Tabatabaei Mashayekh, Alireza, Rodrigo, Rebecca, Ackermann, Manuel, Ghannam, Ibrahim, Stassen, Andim, Merget, Florian, Leisching, Patrick, Witzens, Jeremy

Publikováno v: Proceedings of SPIE; 12/4/2021, Vol. 12006, p120060E-120060E-9, 1p