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Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures

Autor: Tröger, Jan, Kersting, Reinhard, Hagenhoff, Birgit, Bougeard, Dominique, Abrosimov, Nikolay V., Klos, Jan, Schreiber, Lars R., Bracht, Hartmut

The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-o

Externí odkaz: http://arxiv.org/abs/2407.17985

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Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells

Autor: Klos, Jan, Tröger, Jan, Keutgen, Jens, Losert, Merritt P., Riemann, Helge, Abrosimov, Nikolay V., Knoch, Joachim, Bracht, Hartmut, Coppersmith, Susan N., Friesen, Mark, Cojocaru-Mirédin, Oana, Schreiber, Lars R., Bougeard, Dominique

Publikováno v: Adv. Sci. 2407442 (2024)

Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe

Externí odkaz: http://arxiv.org/abs/2405.19974

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Calculation of tunnel-couplings in open gate-defined disordered quantum dot systems

Autor: Klos, Jan, Hassler, Fabian, Cerfontaine, Pascal, Bluhm, Hendrik, Schreiber, Lars R.

Publikováno v: Phys. Rev. B 98, 155320 (2018)

Quantum computation based on semiconductor electron-spin qubits requires high control of tunnel-couplings, both across quantum dots and between the quantum dot and the reservoir. The tunnel-coupling to the reservoir sets the qubit detection and initi

Externí odkaz: http://arxiv.org/abs/1805.01728

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