Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Klitzing, K. v."'
Publikováno v:
Phys. Rev. Lett. 108, 046804 (2012)
The evolution of the fractional quantum Hall state at filling 5/2 is studied in density tunable two-dimensional electron systems formed in wide wells in which it is possible to induce a transition from single to two subband occupancy. In 80 and 60 nm
Externí odkaz:
http://arxiv.org/abs/1109.6219
Anisotropic magneto resistances and intrinsic adiabatic transport features are generated on quantum Hall samples based on an (Al,Ga)As/GaAs heterostructure with alloyed Au/Ge/Ni contacts. We succeed to probe the microscopic origin of these transport
Externí odkaz:
http://arxiv.org/abs/1003.5271
Publikováno v:
Phys. Rev. Lett. 101, 186804 (2008)
A system consisting of two independently contacted quantum dots with strong electrostatic interaction shows interdot Coulomb blockade when the dots are weakly tunnel coupled to their leads. It is studied experimentally how the blockade can be overcom
Externí odkaz:
http://arxiv.org/abs/0811.2697
Autor:
Grayson, M., Steinke, L., Schuh, D., Bichler, M., Hoeppel, L., Smet, J., Klitzing, K. v., Maude, D. K., Abstreiter, G.
Publikováno v:
Phys. Rev. B 76, 201304(R) (2007)
A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, d
Externí odkaz:
http://arxiv.org/abs/cond-mat/0701295
Separately contacted double layers of a 2d electron - 2d hole gases have been prepared in GaAs separated by thin AlGaAs barriers with thicknesses down to 15 nm. The molecular-beam-epitaxial growth was interrupted just before the barrier in order to u
Externí odkaz:
http://arxiv.org/abs/cond-mat/0103589
Two dimensional electron gases in narrow GaAs quantum wells show huge longitudinal resistance (HLR) values at certain fractional filling factors. Applying an RF field with frequencies corresponding to the nuclear spin splittings of {69}Ga, {71}Ga and
Externí odkaz:
http://arxiv.org/abs/cond-mat/9812004
The magneto resistance of a narrow single quantum well is spectacularly different from the usual behavior. At filling factors 2/3 and 3/5 we observe large and sharp maxima in the longitudinal resistance instead of the expected minima. The peak value
Externí odkaz:
http://arxiv.org/abs/cond-mat/9804283
We compare the results of the transport and time-resolved magneto-luminescence measurements in disordered 2D electron systems in GaAs-AlGaAs heterostructures in the extreme quantum limit, in particular, in the vicinity of the metal-insulator transiti
Externí odkaz:
http://arxiv.org/abs/cond-mat/9604153
The local density of states of a degenerate semiconductor is investigated at low magnetic fields. In order to realize this experiment, we designed a strongly asymmetric double-barrier heterostructure with heavily doped contacts and study the resonant
Externí odkaz:
http://arxiv.org/abs/cond-mat/9509137