Zobrazeno 1 - 10
of 928
pro vyhledávání: '"Klimeck, Gerhard"'
Autor:
Wang, Jinying, Klimeck, Gerhard
A topological transition in high-temperature superconductors FeTe1-xSex, occurring at a critical range of Se concentration x, underlies their intrinsic topological superconductivity and emergence of Majorana states within vortices. Nonetheless, the i
Externí odkaz:
http://arxiv.org/abs/2309.00469
Autor:
Mejia, Daniel, Clark, Steven, Verduzco, Juan Carlos, Zentner, Michael, Zentner, Lynn, Klimeck, Gerhard, Strachan, Alejandro
nanoHUB is an open cyber platform for online simulation, data, and education that seeks to make scientific software and associated data widely available and useful. This paper describes recent developments in our simulation infrastructure to address
Externí odkaz:
http://arxiv.org/abs/2306.11062
Autor:
Chen, Chin-Yi, Tseng, Hsin-Ying, Ilatikhameneh, Hesameddin, Ameen, Tarek A., Klimeck, Gerhard, Rodwell, Mark J., Povolotskyi, Michael
Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges with respect to device dimensions and material interfaces. This work s
Externí odkaz:
http://arxiv.org/abs/2010.12964
Autor:
Milutinovic, Veljko, Azer, Erfan Sadeqi, Yoshimoto, Kristy, Klimeck, Gerhard, Djordjevic, Miljan, Kotlar, Milos, Bojovic, Miroslav, Miladinovic, Bozidar, Korolija, Nenad, Stankovic, Stevan, Filipović, Nenad, Babovic, Zoran, Kosanic, Miroslav, Tsuda, Akira, Valero, Mateo, De Santo, Massimo, Neuhold, Erich, Skoručak, Jelena, Dipietro, Laura, Ratkovic, Ivan
This article starts from the assumption that near future 100BTransistor SuperComputers-on-a-Chip will include N big multi-core processors, 1000N small many-core processors, a TPU-like fixed-structure systolic array accelerator for the most frequently
Externí odkaz:
http://arxiv.org/abs/2009.10593
Autor:
Valencia-Zapata, Gustavo A., Gonzalez-Canas, Carolina, Zentner, Michael G., Ersoy, Okan, Klimeck, Gerhard
Several studies point out different causes of performance degradation in supervised machine learning. Problems such as class imbalance, overlapping, small-disjuncts, noisy labels, and sparseness limit accuracy in classification algorithms. Even thoug
Externí odkaz:
http://arxiv.org/abs/2004.02988
Autor:
Chen, Chin-Yi, Ilatikhameneh, Hesameddin, Huang, Jun Z., Klimeck, Gerhard, Povolotskyi, Michael
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band atomistic NE
Externí odkaz:
http://arxiv.org/abs/2002.04220
Autor:
Chu, Yuanchen, Shi, Jingjing, Miao, Kai, Zhong, Yang, Sarangapani, Prasad, Fisher, Timothy S., Klimeck, Gerhard, Ruan, Xiulin, Kubis, Tillmann
The non-equilibrium Green's function (NEGF) method with B\"uttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of
Externí odkaz:
http://arxiv.org/abs/1908.11578
Autor:
Shen, Tingting, Valencia, Daniel, Wang, Qingxiao, Wang, Kuang-Chung, Povolotskyi, Michael, Kim, Moon J., Klimeck, Gerhard, Chen, Zhihong, Appenzeller, Joerg
Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electrons drastically increases the electrical resistivity. In this work, we
Externí odkaz:
http://arxiv.org/abs/1810.06772
Autor:
Chen, Chin-Yi, Ameen, Tarek A., Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Appenzeller, Joerg
2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are achievable through small tunneling distances during the device operat
Externí odkaz:
http://arxiv.org/abs/1804.11034
State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield mo
Externí odkaz:
http://arxiv.org/abs/1803.11352