Zobrazeno 1 - 10
of 631
pro vyhledávání: '"Klie Robert"'
Autor:
Gemperline, Patrick T., Thind, Arashdeep S., Tang, Chunli, Sterbinsky, George E., Kiefer, Boris, Jin, Wencan, Klie, Robert F., Comes, Ryan B.
Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in MOSFETs and FRAM
Externí odkaz:
http://arxiv.org/abs/2409.13066
Autor:
Wong, Joeson, Onizhuk, Mykyta, Nagura, Jonah, Thind, Arashdeep S., Bindra, Jasleen K., Wicker, Christina, Grant, Gregory D., Zhang, Yuxuan, Niklas, Jens, Poluektov, Oleg G., Klie, Robert F., Zhang, Jiefei, Galli, Giulia, Heremans, F. Joseph, Awschalom, David D., Alivisatos, A. Paul
We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enable
Externí odkaz:
http://arxiv.org/abs/2406.07762
Autor:
Zhou, Chenkun, Wang, Di, Lagunas, Francisco, Atterberry, Benjamin, Lei, Ming, Hu, Huicheng, Zhou, Zirui, Filatov, Alexander S., Jiang, De-en, Rossini, Aaron J., Klie, Robert F., Talapin, Dmitri V.
Two-dimensional (2D) transition-metal carbides and nitrides (MXenes) show impressive performance in applications, such as supercapacitors, batteries, electromagnetic interference shielding, or electrocatalysis. These materials combine the electronic
Externí odkaz:
http://arxiv.org/abs/2305.17566
Autor:
Schwenker, Eric, Kolluru, V. S. Chaitanya, Guo, Jinglong, Hu, Xiaobing, Li, Qiucheng, Hersam, Mark C., Dravid, Vinayak P., Klie, Robert F., Guest, Jeffrey R., Chan, Maria K. Y.
To fully leverage the power of image simulation to corroborate and explain patterns and structures in atomic resolution microscopy (e.g., electron and scanning probe), an initial correspondence between the simulation and experimental image must be es
Externí odkaz:
http://arxiv.org/abs/2105.10532
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Badr, Hussein O., Cope, Jacob, Kono, Takayuki, Torita, Takeshi, Lagunas, Francisco, Castiel, Emmanuel, Klie, Robert F., Barsoum, Michel W.
Publikováno v:
In Matter 4 October 2023 6(10):3538-3554
Autor:
Mannodi-Kanakkithodi, Arun, Toriyama, Michael Y., Sen, Fatih G., Davis, Michael J., Klie, Robert F., Chan, Maria K. Y.
The ability to predict the likelihood of impurity incorporation and their electronic energy levels in semiconductors is crucial for controlling its conductivity, and thus the semiconductor's performance in solar cells, photodiodes, and optoelectronic
Externí odkaz:
http://arxiv.org/abs/1906.02244
Autor:
Danielson, Adam, Reich, Carey, Pandey, Ramesh, Munshi, Amit, Onno, Arthur, Weigand, Will, Kuciauskas, Darius, Li, Siming, Bothwell, Alexandra, Guo, Jinglong, Murugeson, Magesh, McCloy, John S., Klie, Robert, Holman, Zachary C., Sampath, Walajabad
Publikováno v:
In Solar Energy Materials and Solar Cells March 2023 251
Autor:
Rui, Xue, Klie, Robert
The presence of oxygen vacancy, as well as ordering of vacancies plays an important role in determining the electronic, ionic and thermal transport properties of many transition metal oxide materials. Controlling the concentration of oxygen vacancies
Externí odkaz:
http://arxiv.org/abs/1811.09769
Autor:
Paulauskas, Tadas, Klie, Robert F.
Publikováno v:
Ultramicroscopy, Volume 196, January 2019, Pages 99-110
High-energy electrons that are used as a probe of specimens in transmission electron microscopy exhibit a complex and rich behavior due to multiple scattering. Among other things, understanding the dynamical effects is needed for a quantitative analy
Externí odkaz:
http://arxiv.org/abs/1811.09138