Zobrazeno 1 - 10
of 484
pro vyhledávání: '"Klie, Robert F."'
Autor:
Wong, Joeson, Onizhuk, Mykyta, Nagura, Jonah, Thind, Arashdeep S., Bindra, Jasleen K., Wicker, Christina, Grant, Gregory D., Zhang, Yuxuan, Niklas, Jens, Poluektov, Oleg G., Klie, Robert F., Zhang, Jiefei, Galli, Giulia, Heremans, F. Joseph, Awschalom, David D., Alivisatos, A. Paul
We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enable
Externí odkaz:
http://arxiv.org/abs/2406.07762
Autor:
Zhou, Chenkun, Wang, Di, Lagunas, Francisco, Atterberry, Benjamin, Lei, Ming, Hu, Huicheng, Zhou, Zirui, Filatov, Alexander S., Jiang, De-en, Rossini, Aaron J., Klie, Robert F., Talapin, Dmitri V.
Two-dimensional (2D) transition-metal carbides and nitrides (MXenes) show impressive performance in applications, such as supercapacitors, batteries, electromagnetic interference shielding, or electrocatalysis. These materials combine the electronic
Externí odkaz:
http://arxiv.org/abs/2305.17566
Autor:
Schwenker, Eric, Kolluru, V. S. Chaitanya, Guo, Jinglong, Hu, Xiaobing, Li, Qiucheng, Hersam, Mark C., Dravid, Vinayak P., Klie, Robert F., Guest, Jeffrey R., Chan, Maria K. Y.
To fully leverage the power of image simulation to corroborate and explain patterns and structures in atomic resolution microscopy (e.g., electron and scanning probe), an initial correspondence between the simulation and experimental image must be es
Externí odkaz:
http://arxiv.org/abs/2105.10532
Autor:
Badr, Hussein O., Cope, Jacob, Kono, Takayuki, Torita, Takeshi, Lagunas, Francisco, Castiel, Emmanuel, Klie, Robert F., Barsoum, Michel W.
Publikováno v:
In Matter 4 October 2023 6(10):3538-3554
Autor:
Mannodi-Kanakkithodi, Arun, Toriyama, Michael Y., Sen, Fatih G., Davis, Michael J., Klie, Robert F., Chan, Maria K. Y.
The ability to predict the likelihood of impurity incorporation and their electronic energy levels in semiconductors is crucial for controlling its conductivity, and thus the semiconductor's performance in solar cells, photodiodes, and optoelectronic
Externí odkaz:
http://arxiv.org/abs/1906.02244
Autor:
Paulauskas, Tadas, Klie, Robert F.
Publikováno v:
Ultramicroscopy, Volume 196, January 2019, Pages 99-110
High-energy electrons that are used as a probe of specimens in transmission electron microscopy exhibit a complex and rich behavior due to multiple scattering. Among other things, understanding the dynamical effects is needed for a quantitative analy
Externí odkaz:
http://arxiv.org/abs/1811.09138
Akademický článek
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Autor:
Hu, Linhua, Kim, Soojeong, Jokisaari, Jacob R., Nolis, Gene M., Yoo, Hyun Deog, Freeland, John W., Klie, Robert F., Fister, Tim T., Cabana, Jordi
Publikováno v:
In Journal of Solid State Chemistry November 2022 315
Autor:
Zangeneh, Danial, Klie, Robert F
Publikováno v:
Microscopy & Microanalysis; 2024 Supplement, Vol. 30, p1-4, 4p
Publikováno v:
Microscopy & Microanalysis; 2024 Supplement, Vol. 30, p1-4, 4p