Zobrazeno 1 - 10
of 319
pro vyhledávání: '"Kleider, J. P."'
The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) and confocal micro-Raman/Photoluminescence (PL) imaging analysis. Local
Externí odkaz:
http://arxiv.org/abs/1404.0472
Autor:
Renard, C., Cherkashin, N., Jaffré, A., Molière, T., Vincent, L., Michel, A., Alvarez, J., Connolly, J. P., Kleider, J. -P., Mencaraglia, D., Bouchier, D.
To date, high efficiency multijunction solar cells have been developed on Ge or GaAs substrates for space applications, and terrestrial applications are hampered by high fabrication costs. In order to reduce this cost, we propose a breakthrough techn
Externí odkaz:
http://arxiv.org/abs/1312.3570
Autor:
Rudolph, M., Vickridge, I., Foy, E., Alvarez, J., Kleider, J.-P., Stanescu, D., Magnan, H., Herlin-Boime, N., Bouchet-Fabre, B., Minea, T., Hugon, M.-C.
Publikováno v:
In Thin Solid Films 1 September 2019 685:204-209
Autor:
Rudolph, M., Stanescu, D., Alvarez, J., Foy, E., Kleider, J.-P., Magnan, H., Minea, T., Herlin-Boime, N., Bouchet-Fabre, B., Hugon, M.-C.
Publikováno v:
In Surface & Coatings Technology 15 September 2017 324:620-625
Autor:
Gudovskikh, A.S., Zelentsov, K.S., Baranov, A.I., Kudryashov, D.A., Morozov, I.A., Nikitina, E.V., Kleider, J.-P.
Publikováno v:
In Energy Procedia December 2016 102:56-63
Autor:
Lachaume, R., Cariou, R., Decobert, J., Foldyna, M., Hamon, G., Cabarrocas, P. Roca i, Alvarez, J., Kleider, J.-P.
Publikováno v:
In Energy Procedia December 2015 84:41-46
Autor:
Gaiaschi, S., Ruggeri, R., Johnson, E.V., Bulkin, P., Chapon, P., Gueunier-Farret, M.-E., Mannino, G., Longeaud, C., Kleider, J.-P.
Publikováno v:
In Thin Solid Films 1 January 2014 550:312-318
Autor:
Darga, A., Favre, W., Fruzzetti, Morgane, Kleider, J.-P., Morel, B., Mencaraglia, D., Yu, P., Marko, Hakim, Arzel, Ludovic, Barreau, Nicolas, Noël, Sébastien, Kessler, John
Publikováno v:
In Journal of Non-Crystalline Solids 1 September 2012 358(17):2428-2430
Akademický článek
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Lead halide perovskites are semiconductor materials which are employed as nonintentionally doped absorbers inserted between two selective carrier transport layers (SCTL), realizing a p-i-n or n-i-p heterojunction. In our study, we have developed and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::642feb55fcdea703f2f50c59c6db4253
https://zenodo.org/record/7032877
https://zenodo.org/record/7032877