Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Klausman, E."'
Publikováno v:
Journal of Applied Physics; 12/15/1992, Vol. 72 Issue 12, p5593, 9p, 2 Charts, 12 Graphs
In an effort to attain a better understanding of the nature of the defects introduced in GaAs by irradiating it with energetic light ions; electron or proton irradiated n-type GaAs samples, cut from the same layer grown by molecular beam epitaxy, hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::cfab1fca9c2981ac385064ef2f7d34ca
https://publica.fraunhofer.de/handle/publica/181523
https://publica.fraunhofer.de/handle/publica/181523
