Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Klaus Wagenhuber"'
Autor:
Matthias Döppe, Ursula Wurstbauer, Werner Wegscheider, Hans-Peter Tranitz, Klaus Wagenhuber, Wolfgang Kipferl, Matthias Reinwald, Dieter Weiss
Publikováno v:
Journal of Crystal Growth. 278:690-694
We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ce2cd5b91cca96fbc4189dcff0bd6c0
https://doi.org/10.1016/j.jcrysgro.2004.12.113
https://doi.org/10.1016/j.jcrysgro.2004.12.113
Autor:
R. Schulz, Werner Wegscheider, Tobias Korn, Sergey Ganichev, Ulrich Niedermeier, Klaus Wagenhuber, Vadim A. Shalygin, Christian Gerl, Eugeniyus L. Ivchenko, Christian Schüller
Publikováno v:
AIP Conference Proceedings.
We performed cw‐photoluminescence (PL) measurements on a 15 nm wide p‐doped Al0.3Ga0.7As‐GaAs‐Al0.3Ga0.7As quantum well structure at low temperatures. By irradiating the sample with circularly polarized light and analyzing the degree of circu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c709d34fc4f7116c080b42b27f7ab535
https://doi.org/10.1063/1.2729954
https://doi.org/10.1063/1.2729954
Photoluminescence and magnetotransport measurements have been performed to assess the quality of modulation doped GaAs/AlGaAs heterostructures. The temporal evolution of the low-temperature electron mobility of samples prepared in a molecular beam ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24dd30a82fc5a409be65181ed9b26e43
