Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Klaus Von Arnim"'
Autor:
C. Rinn Cleavelin, Ian Cayrefourcq, Klaus Von Arnim, Klaus Schruefer, Mike Ma, C.H. Hsu, Thomas Schulz, Tiehui Liu, Carlos Mazure, Jean-Pierre Colinge, Mark Kennard, Karim Cherkaoui, Kyoungsub Shin, P. Patruno, Weize W. Xiong, Sun Xin
Publikováno v:
ECS Transactions. 6:59-69
MuGFET structure improves local transistor mismatch compared to planar bulk MOSFET. This enables further SRAM cell size reduction. GIDL current is well controlled even with a mid-gap metal gate. MuGFETs have low subthreshold leakage if Lg/Wsi ratio i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93216e36ced1504bf47832f9c1ca4734
https://doi.org/10.1149/1.2728842
https://doi.org/10.1149/1.2728842
Autor:
Hans Reisinger, Christian Schlunder, Karl Hofmann, J. Hatsch, Thomas Baumann, Christian Pacha, Georg Georgakos, T. Kodytek, Klaus Von Arnim, K. Ermisch, T. Pompl, Wolfgang Gustin
Publikováno v:
2010 Symposium on VLSI Technology.
A product-level aging monitor replicating a 40nm CMOS ARM1176 critical path is presented. The monitor enables a separation of the dominating negative bias instability (NBTI) stress, including speed recovery, and the switching-activity dependent hot c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d7a74fe8642723d66505faaa8e2cbcb
https://doi.org/10.1109/vlsit.2010.5556134
https://doi.org/10.1109/vlsit.2010.5556134
Autor:
Klaus Schruefer, Thomas Schulz, Thomas Baumann, Christian Pacha, Klaus Von Arnim, Joerg Berthold, Karl Hofmann
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
We present an easy to use method to extrapolate digital circuit performance and power from nominal to worst-case operating conditions. It allows the circuit designer to explore the design space over a continuous rage of voltages and temperatures and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceb1f03a429294c57e8b9ce562291c13
https://doi.org/10.1109/iedm.2009.5424310
https://doi.org/10.1109/iedm.2009.5424310
Autor:
M. Fulde, Doris Schmitt-Landsiedel, Klaus Von Arnim, Rita Rooyackers, Bertrand Parvais, Franz Kuttner, G. Knoblinger, Nadine Collaert, Markus Becherer, Abdelkarim Mercha
In this paper we present the first complex mixed-signal FinFET circuit (>1500 devices). Design and implementation aspects as well as measurement results of a 10-bit current- steering D/A converter are shown. The achieved performance proves the abilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a0ceec21713d2964517b136c0f81d4f
https://doi.org/10.1109/soi.2008.4656311
https://doi.org/10.1109/soi.2008.4656311
Autor:
G. Knoblinger, M. Sterkel, M. Weis, M. Fulde, Walter Hansch, Th. Nirschl, Gerhard Wachutka, A. Heigl, Doris Schmitt-Landsiedel, M. Wirnshofer, Klaus Von Arnim
Publikováno v:
2008 2nd IEEE International Nanoelectronics Conference.
We present fabrication, optimization and application aspects of complementary Multiple-Gate Tunneling FETs (MuGTFETs). Tunneling FETs are implemented in a MuGFET technology for the first time. N- and p-type tunneling currents are observed within a si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3b7e413efcba1a75f91531274b4b87d
https://doi.org/10.1109/inec.2008.4585554
https://doi.org/10.1109/inec.2008.4585554
Autor:
Domagoj Siprak, Weize Xiong, Florian Bauer, C. Russ, Christian Pacha, Andrew Marshall, C.R. Cleavelin, G. Knoblinger, Doris Schmitt-Landsiedel, Klaus Von Arnim, M. Fulde, Klaus Schruefer
Publikováno v:
ICECS
In this paper recent advances in multi-gate MOSFET (MuGFET) circuit design are reported. The feasibility of essential parts of low-power mobile SoC applications and large scale integration capability is shown. Excellent short channel control enables
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19545913ee8c7f4adacd2c14e55b0ed7
https://doi.org/10.1109/icecs.2007.4510961
https://doi.org/10.1109/icecs.2007.4510961
Autor:
W. Xiong, G. Knoblinger, Klaus Schruefer, Christian Pacha, L. Bertolissi, P. Haibach, P. Patruno, C. Russ, Klaus Von Arnim, F. Kuttner, Andrew Marshall, C.R. Cleavelin, T. Schulz, J.P. Engelstaedter
Publikováno v:
ISQED
In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45fdd7cbc3844761e5c26f4dad0d58cf
https://doi.org/10.1109/isqed.2007.106
https://doi.org/10.1109/isqed.2007.106
Autor:
Serge Biesemans, Klaus Von Arnim, Maarten Rosmeulen, Nadine Collaert, O. Varela, Malgorzata Jurczak, J. Ramos, T. Y. Hoffmann, Emmanuel Augendre, A. Nackaertsa, Simone Severi, Thomas Chiarella, Christoph Kerner
Publikováno v:
2006 IEEE international SOI Conferencee Proceedings.
A comprehensive analysis of operational tall triple-gate MuGFET ring oscillators (ROs) is presented for the first time. Device geometries, process options and best inverter layout are discussed based on measured power and delay. A MOS Model 11 based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbe2fd49a359e609da97b87f51773d0e
https://doi.org/10.1109/soi.2006.284490
https://doi.org/10.1109/soi.2006.284490