Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Klaus Magnus H Johansen"'
Autor:
Ylva K. Hommedal, Ymir K. Frodason, Augustinas Galeckas, Lasse Vines, Klaus Magnus H. Johansen
Publikováno v:
APL Materials, Vol 12, Iss 2, Pp 021109-021109-6 (2024)
Zn-related defects in β-Ga2O3 were studied using photoluminescence (PL) spectroscopy combined with hybrid functional calculations and secondary ion mass spectrometry. We have in-diffused Zn by heat treatments of β-Ga2O3 in Zn vapor to promote the f
Externí odkaz:
https://doaj.org/article/a74cbd02753743e691941908bf9cc982
Autor:
Ymir K. Frodason, Patryk P. Krzyzaniak, Lasse Vines, Joel B. Varley, Chris G. Van de Walle, Klaus Magnus H. Johansen
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041121-041121-8 (2023)
Diffusion of the n-type dopant Sn in β-Ga2O3 is studied using secondary-ion mass spectrometry combined with hybrid functional calculations. The diffusion of Sn from a Sn-doped bulk substrate with surface orientation (001) into an epitaxial layer is
Externí odkaz:
https://doaj.org/article/3032e5fecb74404da102583aadbb4dd4
Publikováno v:
Physical Review Materials. 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9280ea5a907aed057629c16b74bec3ec
https://doi.org/10.1103/physrevmaterials.7.035401
https://doi.org/10.1103/physrevmaterials.7.035401
Autor:
Ymir K. Frodason, Joel B. Varley, Klaus Magnus H. Johansen, Lasse Vines, Chris G. Van de Walle
Publikováno v:
Physical Review B. 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c6a7541f449193c16de0fec7c50072
https://doi.org/10.1103/physrevb.107.024109
https://doi.org/10.1103/physrevb.107.024109
Autor:
Bengt Gunnar Svensson, G. C. Vásquez, Lasse Vines, Klaus Magnus H Johansen, Augustinas Galeckas
Publikováno v:
Nanoscale Advances. 2:724-733
The optical properties of single ion tracks have been studied in ZnO implanted with Ge by combining depth-resolved hyperspectral cathodoluminescence (CL) and photoluminescence (PL) spectroscopy techniques. The results indicate that ZnO is susceptible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51a87da5366eada11c88d756f510fe24
https://doi.org/10.1039/c9na00677j
https://doi.org/10.1039/c9na00677j
Autor:
Jon Borgersen, Klaus Magnus H Johansen, Andrej Yu. Kuznetsov, Lasse Vines, H. v. Wenckstern, Marius Grundmann
Fermi level controlled point defect balance is demonstrated in ion irradiated indium oxide ( In2O3). Specifically, our observations can be sub-divided into the formation of isolated Frenkel pairs and secondary defects, correlated with an increase and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::258dd126ec83b1205b6fbdbed94b57da
http://hdl.handle.net/10852/93123
http://hdl.handle.net/10852/93123
Autor:
Augustinas Galeckas, Lasse Vines, David Maestre, Ana Cremades, Øystein Prytz, G. C. Vásquez, A. Yu. Kuznetsov, Klaus Magnus H Johansen, Marianne Etzelmüller Bathen, C. Bazioti, A. M. Moe
Publikováno v:
E-Prints Complutense. Archivo Institucional de la UCM
instname
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Nano Letters
instname
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Nano Letters
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::009ba66f97398854dce94f3fc29497a2
http://arxiv.org/abs/2011.02758
http://arxiv.org/abs/2011.02758
Autor:
Jesús Zúñiga-Pérez, Jon Borgersen, Ymir Kalmann Frodason, Andrej Yu. Kuznetsov, Martin W. Allen, Klaus Magnus H Johansen, Lasse Vines, Holger von Wenckstern, Marius Grundmann
Publikováno v:
Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter, IOP Publishing, 2020, 32 (50), pp.415704. ⟨10.1088/1361-648X/abac8b⟩
Journal of Physics: Condensed Matter, IOP Publishing, 2020, 32 (50), pp.415704. ⟨10.1088/1361-648X/abac8b⟩
The evolution of electrical resistance as function of defect concentration is examined for the unipolar n-conducting oxides CdO, β-Ga 2 O 3 , In 2 O 3 , SnO 2 and ZnO in order to explore the predictions of the amphoteric defect model. Intrinsic defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::616c596e3f0034dc54ab2d1e4c7c760d
https://pubmed.ncbi.nlm.nih.gov/32756022
https://pubmed.ncbi.nlm.nih.gov/32756022
Autor:
P. T. Neuvonen, Lasse Vines, Filip Tuomisto, Klaus Magnus H Johansen, Vera Prozheeva, A. Yu Kuznetzov, A. Zubiaga
Publikováno v:
Materials Science in Semiconductor Processing. 69:19-22
Positron annihilation spectroscopy and secondary ion mass spectrometry have been applied to study the evolution of polishing-induced defects in hydrothermally grown ZnO samples depending on the annealing temperature. Annealing of the as-grown ZnO waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52e50a9a4e197d792bd5c6aa4b580194
https://doi.org/10.1016/j.mssp.2017.02.021
https://doi.org/10.1016/j.mssp.2017.02.021
Publikováno v:
Physical Review B. 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05facec540b00494b9de6e1c05145cba
https://doi.org/10.1103/physrevb.100.184102
https://doi.org/10.1103/physrevb.100.184102