Zobrazeno 1 - 10
of 119
pro vyhledávání: '"Klaus J. Bachmann"'
Autor:
John J. Hren, J. A. Grenko, Klaus J. Bachmann, Zlatko Sitar, C. L. Reynolds, P. G. Kotula, Raoul Schlesser
Publikováno v:
Journal of Applied Physics. 96:5185-5188
GaN whiskers with nanoscale dimensions have been fabricated by photoelectrochemical (PEC) etching in dilute H3PO4 electrolyte. Etching in lower concentration H3PO4 electrolyte for 1 h or for a short time of 5 min at a higher concentration results in
Autor:
Donald O. Frazier, C. A. Cardelino, Klaus J. Bachmann, Craig E. Moore, S. D. Mccall, Beatriz H. Cardelino
Publikováno v:
The Journal of Physical Chemistry A. 107:3708-3718
A procedure for calculating homolytic dissociation rate constants is reported for modeling organometallic vapor-phase epitaxy (OMVPE) of III−V compounds for all pressure regimes. Reaction rate constants were predicted following a semiclassical appr
Publikováno v:
Acta Materialia. 50:1275-1287
We have investigated the origin of contrast features observed in coalesced GaP islands, deposited by chemical beam epitaxy on (001) Si, by high resolution transmission electron microscopy and conventional dark field electron microscopy. Our results i
Autor:
C. A. Cardelino, Craig E. Moore, Beatriz H. Cardelino, C Nasa George, Donald O. Frazier, Klaus J. Bachmann
Publikováno v:
The Journal of Physical Chemistry A. 105:849-868
The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compo
Publikováno v:
Philosophical Magazine A. 80:555-572
Evolution of gallium phosphide epitaxial islands, grown on the (001), (111), (110) and (113) surfaces of Si by chemical beam epitaxy, has been investigated by p-polarized reflectance spectroscopy, transmission electron microscopy and atomic force mic
Publikováno v:
Thin Solid Films. 357:53-56
Microstructures of GaP epitaxial islands grown on Si(001) and Si(111) by chemical beam epitaxy have been investigated by transmission electron microscopy (TEM). Results indicate that planar-defect free GaP islands of sizes
Autor:
C. Höpfner, Sonya D. McCall, Jeffrey S. Scroggs, Klaus J. Bachmann, Harvey Thomas Banks, Grace M. Kepler, S. Lesure
Publikováno v:
Mathematical and Computer Modelling. 29:65-80
A team composed of material scientists, physicists, and applied mathematicians have used computer simulations as a fundamental design tool in developing a new prototype High Pressure Organometallic Chemical Vapor Deposition (HPOMCVD) reactor for use
Publikováno v:
Journal of The Electrochemical Society. 146:1147-1150
In this paper we report recent results regarding the nucleation and growth of GaP on Si(001), (111), and (113) surfaces under the conditions of pulsed chemical beam epitaxy using tertiary butylphosphine and triethylgallium as source vapors. The kinet
Publikováno v:
Materials Science and Engineering: B. 57:9-17
The suitability of a vertical cylindrical reactor with highly constrained radial flow from a central gas injection port past a set of heated substrate wafers that are embedded in the top channel wall has been evaluated in the context of organometalli
Autor:
Klaus J. Bachmann, Scott C. Beeler, Harvey Thomas Banks, C. Höpfner, N. Sukidi, Hien T. Tran, Kazufumi Ito, Christopher Harris, Nikolaus Dietz
Publikováno v:
Journal of Crystal Growth. 183:323-337
The structure in the p-polarized reflectance (PR) intensity R p4 ( t ) - observed under conditions of pulsed chemical beam epitaxy (PCBE) - is modeled on the basis of the four-layer stack: ambient/surface reaction layer (SRL)/epilayer/substrate. Line