Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Klaus Herold"'
Ein Bedenken des Vaterunsers, das uns Jesus hinterlassen hat und Christen weltweit verbindet, stand 2018 an 10 Stationen im Mittelpunkt der jährlichen Pilgerwanderung des Kirchenfoyers. Ein Gebet, das es in sich hat, wenn es in seinem Gehalt durchda
Autor:
Klaus Herold
Das Lösungsheft zum Buch. Dieses bewährte Fachrechenbuch enthält eine umfangreiche Aufgabensammlung für alle Spezialgebiete der gartenbaulichen Ausbildung. Es ist sowohl für den reinen Fachrechenunterricht im ersten Ausbildungsjahr geeignet als
Autor:
Klaus Herold
Dieses bewährte Fachrechenbuch stellt Ihnen eine umfangreiche Aufgabensammlung für alle Spezialgebiete der gartenbaulichen Ausbildung zur Verfügung. Es ist sowohl für den reinen Fachrechenunterricht im ersten Ausbildungsjahr geeignet als auch dur
Autor:
Derren N. Dunn, Chandra Sarma, Klaus Herold, Scott M. Mansfield, Len Y. Tsou, Amr Abdo, Daniel Fischer
Publikováno v:
SPIE Proceedings.
In this paper, we demonstrate a new methodology for post-etch OPC modeling to compensate for effects of underlayer seen on product wafers. Current resist-only OPC models based on data from flopdown wafers are not always accurate enough to deliver pat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::169b3d0cd60308d03f1a88679bb19f98
https://doi.org/10.1117/12.813546
https://doi.org/10.1117/12.813546
Autor:
Klaus Herold, Gerhard Lembach, Ian Stobert, Derren N. Dunn, J. Liu, Chandrasekhar Sarma, Scott M. Mansfield
Publikováno v:
SPIE Proceedings.
We present an etch-aware optical proximity correction (OPC) flow that is intended to optimize post-etch patterns on wafer. We take advantage of resource efficient empirical etch models and a model based retargeting scheme to determine post-develop in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::354feb44f7cc66c2980a5469551d250f
https://doi.org/10.1117/12.814224
https://doi.org/10.1117/12.814224
Publikováno v:
Photomask Technology 2008.
A single patterning solution is still desirable to keep the costs low for high volume wafer manufacturing. This paper will outline the process steps necessary to scale the single patterning approach for gate level from 65mn into the 45nm technology n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e622e8c9e5a5c88d4e51bd2f7c956939
https://doi.org/10.1117/12.801526
https://doi.org/10.1117/12.801526
Autor:
Ian Stobert, Ryan L. Burns, Jason E. Meiring, James M. Oberschmidt, Scott M. Mansfield, Chidam Kallingal, Amr Abdo, Ramya Viswanathan, Klaus Herold
Publikováno v:
Optical Microlithography XXI.
The lithographic processes and resolution enhancement techniques (RET) needed to achieve pattern fidelity are becoming more complicated as the required critical dimensions (CDs) shrink. For technology nodes with smaller devices and tolerances, more c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439e72f947b3eb65735cd8354a610f43
https://doi.org/10.1117/12.772902
https://doi.org/10.1117/12.772902
Autor:
Allen H. Gabor, Scott Halle, Helen Wang, Henning Haffner, Chandrasekhar Sarma, Len Y. Tsou, Haoren Zhuang, Klaus Herold
Publikováno v:
Optical Microlithography XXI.
As SRAM arrays become lithographically more aggressive than random logic, they are more and more determining the lithography processes used. High yielding, low leakage, dense SRAM cells demand fairly aggressive lithographic process conditions. This l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc3dd6ec3c08691e8a2edf8a8309ad50
https://doi.org/10.1117/12.772985
https://doi.org/10.1117/12.772985
Publikováno v:
SPIE Proceedings.
The existence of pitch range with depth of focus below a sustainable limit is a well known fact in lithography. Such 'forbidden pitch' range limits designers' ability to pack more functionality in a logic chip. One of the ways to increase the process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6012df15fcced8ead2d89053d0f40a1f
https://doi.org/10.1117/12.711480
https://doi.org/10.1117/12.711480
Publikováno v:
SPIE Proceedings.
The transition to the 65nm technology node requires improved methodologies for model based optical proximity correction. The approaches used for previous generations might not be able to deliver the high accuracy which is necessary for gate patternin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddda01db46ab3178c85591a97fbcc538
https://doi.org/10.1117/12.686725
https://doi.org/10.1117/12.686725