Zobrazeno 1 - 10 of 83 pro vyhledávání: '"Klad’ko, V.P."'
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Akademický článek
Microdefects and nonstoichiometry level in GaAs:Si/GaAs films grown by liquid-phase epitaxy method
Autor: Klad’ko, V.P ∗, Datsenko, L.I, Zytkiewicz, Z, Bak-Misiuk, J, Maksimenko, Z.V
Publikováno v: In Journal of Alloys and Compounds 2001 328(1):218-221
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4
Dynamical X-Ray Diffraction Characterization of the Self-Organized Quantum Dot Formation In Imperfect Semiconductor Superlattices
Autor: Lizunova, S.V., Skakunova, O.S., Olikhovskii, S.I., Len, E.G., Molodkin, V.B., Klad’ko, V.P., Kyslovs’kyy, Ye.M., Sheludchenko, B.V.
The self-organized quantum dot (QD) formation in InGaAs/GaAs superlattices grown by molecular beam epitaxy was investigated by the high-resolution X-ray diffraction technique. The investigated samples had the identical structure consisting of fifteen
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2001::ccf6160f47385abe285d71dc6bde1fc6
http://essuir.sumdu.edu.ua/handle/123456789/42647
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5
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
Autor: Belyaev, A.E., Pilipenko, V.A., Anischik, V.M., Petlitskaya, T.V., Klad’ko, V.P., Konakova, R.V., Boltovets, N.S., Korostinskaya, T.V., Kapitanchuk, L.M., Kudryk, Ya.Ya., Vinogradov, A.O., Sheremet, V.N.
We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for 10 m
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::af4fd491a53bba93ca562c3a9f003cd7
http://dspace.nbuv.gov.ua/handle/123456789/117675
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Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon
Autor: Oberemok, O.S., Gamov, D.V., Litovchenko, V.G., Romanyuk, B.M., Melnik, V.P., Klad’ko, V.P., Popov, V.G., Gudymenko, O.Yo.
The transport of dissolved oxygen in the Czochralski silicon towards the arsenic-doped ultra-shallow junction was investigated. Ultra-shallow junction was formed by low-energy As+ ion implantation with the subsequent furnace annealing at 750 C-950 C
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2001::0d90990a73e9ad1324792040b2930f8c
http://essuir.sumdu.edu.ua/handle/123456789/35276
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7
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
Autor: Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kuchuk, A.V., Korostinskay, T.V., Pilipchuk, A.S., Sheremet, V.N., Mazur, Yu.I., Ware, M.E., Salamo, G.J.
We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::2669aecaaaed0e6c427c1e25b1969925
http://dspace.nbuv.gov.ua/handle/123456789/117817
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8
Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
Autor: Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.
We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential decrease, as well as those with
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::f8911fcac00457aa547c2f1224eaf8ef
http://dspace.nbuv.gov.ua/handle/123456789/118725
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9
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
Autor: Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.
We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences of the I−V cur
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::a6cb6f3f374b3121cccb4e56e9282ad1
http://dspace.nbuv.gov.ua/handle/123456789/117993
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10
Screen-printed p-CdTe layers for CdS/CdTe solar cells
Autor: Klad'ko, V.P., Lytvyn, P.M., Osipyonok, N.M., Pekar, G.S., Prokopenko, I.V., Singaevsky, A.F.
Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes to form layers with require
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::10bbfb181c4bd8a19b3b30d9bbf2909d
http://dspace.nbuv.gov.ua/handle/123456789/121646
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