Accurate drain conductance modeling for distortion analysis in MOSFETs

Autor: Langevelde, van, R., Klaassen, F.M.

Publikováno v: Technical Digest IEDM 1997, 313-316
STARTPAGE=313;ENDPAGE=316;TITLE=Technical Digest IEDM 1997

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::1ff4b74e7dd7c167a777a7f31aa56ff6
https://research.tue.nl/nl/publications/166e87a4-1a5e-44c8-9e47-163283505e1b

Determination of series resistance using one single MOSFET

Autor: Otten, J.A.M., Klaassen, F.M.

Publikováno v: Proc. 25th European Solid State Device Research Conference, ESSDERC '95, 483-486
STARTPAGE=483;ENDPAGE=486;TITLE=Proc. 25th European Solid State Device Research Conference, ESSDERC '95

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::4960df4d63d18d0ce0089058a285213f
https://research.tue.nl/nl/publications/e3b8ea87-c3a7-441a-90b0-611b9a6a5500

Compact MOS modelling for analog circuit simulation

Autor: Velghe, R.M.D.A., Klaassen, D.B.M., Klaassen, F.M.

Publikováno v: Proc. 24th European Solid State Device Research Conference, ESSDERC 1994, 833-836
STARTPAGE=833;ENDPAGE=836;TITLE=Proc. 24th European Solid State Device Research Conference, ESSDERC 1994

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::622a3344d3ce173ceec0664d3e66c65f
https://research.tue.nl/nl/publications/abbe28a5-af97-441f-9ca4-c9085b39f372

Physics of and models for I2L.

Autor: Klaassen, F.M.

Publikováno v: 1976 International Electron Devices Meeting; 1976, p299-303, 5p

Compact MOS modeling for analog circuit simulation.

Autor: Velghe, R.M.D.A., Klaassen, D.B.M., Klaassen, F.M.

Publikováno v: Proceedings of IEEE International Electron Devices Meeting; 1993, p485-488, 4p