Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kiyung Kim"'
Autor:
Yongsu Lee, Heejin Kwon, Seung-Mo Kim, Ho-In Lee, Kiyung Kim, Hae-Won Lee, So-Young Kim, Hyeon Jun Hwang, Byoung Hun Lee
Publikováno v:
Nano Convergence, Vol 10, Iss 1, Pp 1-9 (2023)
Abstract A p-type ternary logic device with a stack-channel structure is demonstrated using an organic p-type semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate
Externí odkaz:
https://doaj.org/article/606aac6476ab47699952f522ebeed8dd
Autor:
Yongsu Lee, Seung-Mo Kim, Kiyung Kim, So-Young Kim, Ho-In Lee, Heejin Kwon, Hae-Won Lee, Chaeeun Kim, Surajit Some, Hyeon Jun Hwang, Byoung Hun Lee
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract P-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable thresho
Externí odkaz:
https://doaj.org/article/85faa7586f8b43eb9acc0a4ba44c7099
Autor:
Soo Cheol Kang, So Young Kim, Sang Kyung Lee, Kiyung Kim, Billal Allouche, Hyeon Jun Hwang, Byoung Hun Lee
Publikováno v:
Nanomaterials, Vol 10, Iss 6, p 1186 (2020)
The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of Zn
Externí odkaz:
https://doaj.org/article/aa707325e2a841a88c3191664614b8df
Autor:
Yongsu Lee, Sunmean Kim, Ho-In Lee, Seung-Mo Kim, So-Young Kim, Kiyung Kim, Heejin Kwon, Hae-Won Lee, Hyeon Jun Hwang, Seokhyeong Kang, Byoung Hun Lee
Publikováno v:
ACS nano. 16(7)
Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼10
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Autor:
Kyung Rok Kim, Byoung Hun Lee, Kiyung Kim, Yun Ji Kim, Sunwoo Heo, Segi Lee, Soyoung Kim, Seung Mo Kim, Hyeji Lee, Sunmean Kim, Seokhyeong Kang, Ho-In Lee
Publikováno v:
IEEE Electron Device Letters. 39:1948-1951
Ternary logic circuit has been studied for several decades because it can provide simpler circuits and subsequently lower power consumption via succinct interconnects. We demonstrated a ternary full adder exhibiting a low power-delay-product of ~10
Autor:
Sunmean Kim, Daeyeon Kim, Seokhyeong Kang, Byoung Hun Lee, Soyoung Kim, Yongsu Lee, Kiyung Kim
Publikováno v:
ISMVL
Ternary logic is more power-efficient than binary logic because of lower device count required to perform the same logic functions. Its benefits become more pronounced in highly scaled systems where most power consumption occurs at the interconnect p
Autor:
Byoung Hun Lee, Kiyung Kim, Min Jae Kim, Hyeon Jun Hwang, Seung-Mo Kim, Junga Ryou, Yongsu Lee, Soyoung Kim, Yong-Hoon Kim
Publikováno v:
ACS applied materialsinterfaces. 12(25)
The physical and chemical characteristics of the edge states of graphene have been studied extensively as they affect the electrical properties of graphene significantly. Likewise, the edge states of graphene in contact with semiconductors or transit
Autor:
Byoung Hun Lee, A. Reum Kim, Sung Ho Yu, Ho In Lee, Kiyung Kim, Hyeon Jun Hwang, Yongsu Lee, Soyoung Kim, Seung Mo Kim, Hae Won Lee, Myung Mo Sung
Publikováno v:
Advanced Electronic Materials. 7:2100247
Autor:
Kiyung Kim, Moon-Ho Ham, Sunwoo Heo, Hyeon Jun Hwang, Seung-Mo Kim, Ho-In Lee, Myungwoo Son, Yongsu Lee, Soyoung Kim, Byoung Hun Lee
Publikováno v:
ISMVL
Graphene barristors with two parallel connected n-type and undoped graphene channels are used to build a ternary logic switch. Three distinctly separated out current levels are successfully demonstrated and the experimental device parameters obtained