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pro vyhledávání: '"Kiyotaka Yonekawa"'
Autor:
Izumi Aikawa, Akio Kita, Kiyotaka Yonekawa, Kazuhiko Kai, Kenji Nishi, Jiro Ida, Atsushi Ohtomo
Publikováno v:
Japanese Journal of Applied Physics. 33:475
It is concluded that in a shallow junction of post-junction silicide (PJS) scheme self-aligned silicide (SALICIDE) process, the decrease of impurity concentration at the TiSi2/Si interface significantly degrades performance of metal oxide semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6abb88a3c0dcff51f1d0bd24b69f1004
https://doi.org/10.1143/jjap.33.475
https://doi.org/10.1143/jjap.33.475
