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pro vyhledávání: '"Kiyotaka Tomiyama"'
Autor:
Yasushi Sasaki, Natsuki Yokoyama, Hisao Inomata, Tetsuo Iijima, Atsushi Fujiki, Hiroyoshi Kobayashi, Satoshi Ibori, Kiyotaka Tomiyama, Haruka Shimizu, Satoru Akiyama
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
The SiC JFET/Si MOSFET cascode is an attractive alternative to conventional Si MOSFETs or IGBTs due to its low on-resistance and good switching performance. However, dv/dt control without increased switching loss is difficult when using a conventiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad93d2f960c6a8363199598420b2ab57
https://doi.org/10.1109/ispsd.2014.6856016
https://doi.org/10.1109/ispsd.2014.6856016
