Zobrazeno 1 - 10
of 163
pro vyhledávání: '"Kiyoshi Yasutake"'
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085318-085318-7 (2021)
The diffusion properties of an excess H atom adsorbed on a fully H-terminated Si(100)(2 × 1)-H surface have been analyzed by means of density functional theory-generalized gradient approximation calculations. Our diffusion pathway models consist of
Externí odkaz:
https://doaj.org/article/021e9536374b4746b8cdff09ea6e03c6
Autor:
Hiromasa Ohmi, Jumpei Sato, Yoshiki Shirasu, Tatsuya Hirano, Hiroaki Kakiuchi, Kiyoshi Yasutake
Publikováno v:
ACS Omega, Vol 4, Iss 2, Pp 4360-4366 (2019)
Externí odkaz:
https://doaj.org/article/59fb4d8a2cc84cfc82f5436e5dff5e56
Publikováno v:
Journal of Applied Physics. 132:103302
We have investigated the deposition characteristics of silicon oxide (SiO x) layers in atmospheric pressure (AP) argon (Ar)-based plasma at a substrate temperature of 120 °C. A 150 MHz, very high-frequency (VHF) power is effectively used for excitin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a822cf8e64febc33d4b7d19afc9430a
https://doi.org/10.1063/5.0101596
https://doi.org/10.1063/5.0101596
Publikováno v:
Precision Engineering. 60:265-273
SiO2-like films are deposited with high rates at substrate temperatures in the range of ≤120 °C by means of the developed atmospheric-pressure (AP) plasma-enhanced chemical vapor deposition (PECVD) technology. The AP plasma is excited by using a n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89a4cbe85cc3418e9b4fc3f3daaffda0
https://doi.org/10.1016/j.precisioneng.2019.07.017
https://doi.org/10.1016/j.precisioneng.2019.07.017
Autor:
Kiyoshi Yasutake, Hiromasa Ohmi, Jumpei Sato, Tatsuya Hirano, Hiroaki Kakiuchi, Yoshiki Shirasu
Publikováno v:
ACS Omega, Vol 4, Iss 2, Pp 4360-4366 (2019)
ACS Omega
ACS Omega
The characteristics of copper (Cu) isotropic dry etching using a hydrogen-based plasma generated at 13.3 kPa (100 Torr) were improved dramatically by simply introducing a moderate amount of N2 gas into the process atmosphere. A maximum Cu etch rate o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::beda38e77300772c6108dea1ad63e126
https://doi.org/10.1021/acsomega.8b03163
https://doi.org/10.1021/acsomega.8b03163
Publikováno v:
Journal of Vacuum Science & Technology B. 40:032801
In this study, we prepared a silicon nanocone structure using a relatively high-pressure H2 plasma in the range of 3.3–27 kPa. The silicon sample with the prepared nanocone structure exhibited a black surface. We investigated the dependence of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ca250ee3f791d6a01508f027a3d4d33
https://doi.org/10.1116/6.0001676
https://doi.org/10.1116/6.0001676
Publikováno v:
Journal of Alloys and Compounds. 728:1217-1225
Indium (In) evaporation is enhanced by high-pressure hydrogen glow plasma, and a sponge-like In film containing submicron pores is prepared on the substrate. The glow plasma is generated at a total pressure of 13.3 kPa (100 Torr) as a capacitively co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b493d4c14a9bb026e840241324744e71
https://doi.org/10.1016/j.jallcom.2017.08.275
https://doi.org/10.1016/j.jallcom.2017.08.275
Publikováno v:
Journal of Applied Physics; 2017, Vol. 122 Issue 3, p1-8, 8p, 1 Color Photograph, 3 Diagrams, 3 Charts, 5 Graphs
Publikováno v:
Journal of Applied Physics. 130:063301
Indium nitride nanostructures have been formed by atmospheric and sub-atmospheric pressure plasma nitridation of molten indium. By nitriding the molten indium metal layer with Ar-10%N2 atmospheric pressure plasma at 435 K, micrometer-sized particles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d394d4c19f6da64849f0348cf02dae9
https://doi.org/10.1063/5.0055532
https://doi.org/10.1063/5.0055532
Publikováno v:
Journal of Applied Physics. 130:053307
Atmospheric-pressure (AP) plasma-enhanced chemical vapor deposition of silicon (Si) films was numerically simulated. The AP plasma used for Si depositions was excited by a 150-MHz very high-frequency (VHF) electric power, which was capable of generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ec02d36a99881a4f73c562504a96ab2
https://doi.org/10.1063/5.0057951
https://doi.org/10.1063/5.0057951