Výsledky vyhledávání - "Kiyoshi Shimamura"

Akademický článek

Ultralow-field magnetocaloric materials for compact magnetic refrigeration

Autor: Peng Liu, Dongsheng Yuan, Chao Dong, Gaoting Lin, Encarnación G. Víllora, Ji Qi, Xinguo Zhao, Kiyoshi Shimamura, Jie Ma, Junfeng Wang, Zhidong Zhang, Bing Li

Publikováno v: NPG Asia Materials, Vol 15, Iss 1, Pp 1-9 (2023)

Abstract Magnetic refrigeration around the liquid-helium temperature plays a critical role in many technological sectors. Even if gallium gadolinium garnet (GGG) has been regarded as the benchmark, its application is highly limited by the small magne

Externí odkaz: https://doaj.org/article/35e2a26a407f492c8d330a0b51e7b744

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Akademický článek

Scattering-free Ce:LYBO single crystals for thermal neutron detection

Autor: Dongsheng Yuan, Encarnación G. Víllora, Daisuke Nakauchi, Takumi Kato, Noriaki Kawaguchi, Takayuki Yanagida, Kiyoshi Shimamura

Publikováno v: Applied Physics Express, Vol 17, Iss 1, p 015502 (2024)

Ce:Li _6 Y(BO _3 ) _3 (LYBO) is a well-known candidate for thermal neutron detection with a very high Li concentration (3.06 × 10 ^22 /cm ^3 ). So far, as-grown crystals exhibit a milky appearance that compromises their performance as scintillators.

Externí odkaz: https://doaj.org/article/b678c853a67247b0b8136da4afb9b017

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Akademický článek

Optoelectronic characteristics of the Ag-doped Si p-n photodiodes prepared by a facile thermal diffusion process

Autor: Ahmed A. M. El-Amir, Takeo Ohsawa, Satoshi Ishii, Masataka Imura, Hiroyo Segawa, Isao Sakaguchi, Tadaaki Nagao, Kiyoshi Shimamura, Naoki Ohashi

Publikováno v: AIP Advances, Vol 9, Iss 5, Pp 055024-055024-5 (2019)

For the full benefit of the silicon chip industry and to further shift the photoresponse cut-off wavelength of the silicon photodetectors, high-performance Ag-doped Si p-n photodiodes with an extended infrared photoresponsivity are constructed on the

Externí odkaz: https://doaj.org/article/cf5338b197704ca690a70e311de0b79a

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Akademický článek

Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode

Autor: Ahmed A. M. El-Amir, Takeo Ohsawa, Yoshitaka Matsushita, Yoshiki Wada, Kiyoshi Shimamura, Naoki Ohashi

Publikováno v: AIP Advances, Vol 8, Iss 11, Pp 115005-115005-5 (2018)

This paper reports the results on fabrication methodology and photoresponse characteristics of Mg2Si0.53Ge0.47 pn-junction photodiode. At first, we have grown a Mg2Si0.53Ge0.47 single crystal with the Vertical Bridgman growth process. The grown cryst

Externí odkaz: https://doaj.org/article/f22b96e4d0cb4ef1bc9cdf307e0e5f5d

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