Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Kiyoshi OGATA"'
Publikováno v:
Photomask Technology 2020.
Nanoimprint lithography (NIL) is one of the highest potential candidates for next generation lithography (NGL) in semiconductors. NIL is very useful technology for fine pattern fabrications compared to conventional optical lithography. NIL technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2cb7add49d234364ef1a7df9e37eb6e
https://doi.org/10.1117/12.2572462
https://doi.org/10.1117/12.2572462
Autor:
Kiyoshi Ogata, Rikiya Taniguchi, Takashi Hirano, Kazuhiko Omote, Kazuki Hagihara, Naoya Hayashi, Eiji Yamanaka, Yoshiyasu Ito
Publikováno v:
Photomask Technology 2018.
Nanoimprint lithography (NIL) is one of the highest potential candidates for next generation lithography (NGL) in semiconductors[1][2]. NIL is very useful technology for pattern fabrication in high resolutions and low costs compared to conventional o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d2e451a4e7d6ffecb717e4158a7ff7
https://doi.org/10.1117/12.2503252
https://doi.org/10.1117/12.2503252
Autor:
Yoshiyasu Ito, Kazuki Hagihara, Naoya Hayashi, Kiyoshi Ogata, Kazuhiko Omote, Rikiya Taniguchi, Eiji Yamanaka
Publikováno v:
SPIE Proceedings.
Nanoimprint lithography (NIL) is one of the highest potential candidates for next generation lithography in semiconductors. NIL is very useful technology for pattern fabrication in high resolution compared to conventional optical lithography. NIL tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44a94dba226dbf03628bcdd02f69c1df
https://doi.org/10.1117/12.2280686
https://doi.org/10.1117/12.2280686
Autor:
Kazuhiko Omote, Eiji Yamanaka, Masamitsu Itoh, Naoya Hayashi, Kiyoshi Ogata, Rikiya Taniguchi, Yoshiyasu Ito
Publikováno v:
SPIE Proceedings.
Nanoimprint lithography (NIL) is one of the most potential candidates for the next generation lithography for semiconductor. It will achieve the lithography with high resolution and low cost. High resolution of NIL will be determined by a high defini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d98ad25e9696a6904ea3f1522ea31c72
https://doi.org/10.1117/12.2246570
https://doi.org/10.1117/12.2246570
Autor:
Sadao Isotani, M. Matsuoka, Wilmer Sucasaire, Kiyoshi Ogata, J.C.R. Mittani, Ronaldo D. Mansano, Ricardo A. Pinto, Naoto Kuratani
Publikováno v:
World Journal of Nano Science and Engineering. :92-102
Thin carbon nitride (CNx) films were synthesized on silicon substrates by reactive RF magnetron sputtering of a graphite target in mixed N2/Ar discharges and the N2 gas fraction in the discharge gas, F N, varied from 0.5 to 1.0. The atomic bonding co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f7b4daacf286f358e175ba928d0dba8
https://doi.org/10.4236/wjnse.2012.22012
https://doi.org/10.4236/wjnse.2012.22012
Autor:
Kiyoshi Ogata, Eiji Takahashi, Tsukasa Hayashi, Kosuke Takenaka, Akinori Ebe, Hirokazu Kaki, Yuichi Setsuhara, Atsushi Tomyo
Publikováno v:
Surface and Coatings Technology. 202:5672-5675
Hydrogenated microcrystalline silicon (µc-Si:H) films were prepared by inductive coupled plasma chemical vapor deposition (ICP-CVD) system using internal low inductance antenna (LIA) units on various under layer composed of Si, O, and N. The resulta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad54b83f469ddd1b15fceb59d4489889
https://doi.org/10.1016/j.surfcoat.2008.06.042
https://doi.org/10.1016/j.surfcoat.2008.06.042
Publikováno v:
Surface and Coatings Technology. 202:3129-3135
Thin zirconium nitride films were prepared on Si(100) substrates at room temperature by ion beam assisted deposition with a 2 keV nitrogen ion beam. Arrival rate ratios ARR(N/Zr) used were 0.19, 0.39, 0.92, and 1.86. The chemical composition and bond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26cc3860ffa703968618c7dd9ca71c7
https://doi.org/10.1016/j.surfcoat.2007.11.019
https://doi.org/10.1016/j.surfcoat.2007.11.019
Autor:
Kiyoshi Ogata, Yuichi Setsuhara, Hirokazu Kaki, Tsukasa Hayashi, Yasuaki Nishigami, Atsushi Tomyo, Akinori Ebe, Masaki Fujiwara, Kiyoshi Kubota, Eiji Takahashi
Publikováno v:
Japanese Journal of Applied Physics. 46:1280-1285
A novel inductively-coupled RF plasma source with internal low-inductance antenna (LIA) units was developed to synthesize microcrystalline silicon (µc-Si) film on a large glass substrate. A film thickness profile on a 600×720 mm2 glass substrate wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7462a07b29d2bc1ba8e44b2d4e9dd246
https://doi.org/10.1143/jjap.46.1280
https://doi.org/10.1143/jjap.46.1280
Publikováno v:
Journal of Non-Crystalline Solids. 352:3191-3195
Extended X-ray absorption fine structure analyses were carried out on Si 1− X Ge X films of different thicknesses, prepared by the reactive thermal chemical vapor deposition (CVD) method. From a Rutherford backscattering measurement, the Ge fractio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2324c35c579cd3feb6c58468cf1a6b9
https://doi.org/10.1016/j.jnoncrysol.2006.05.013
https://doi.org/10.1016/j.jnoncrysol.2006.05.013
Autor:
Kiyoshi Ogata, Cody A. Koch, Kim A. Butters, Akiyoshi Kanazawa, Ryuta Nishitai, Bruce E. Knudsen, Timothy B. Plummer, Jeffrey L. Platt
Publikováno v:
The Journal of Immunology. 174:7302-7309
When activated on or in the vicinity of cells, complement usually causes loss of function and sometimes cell death. Yet the liver, which produces large amounts of complement proteins, clears activators of complement and activated complexes from porta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f37e7e216470c59378225384a2ab60df
https://doi.org/10.4049/jimmunol.174.11.7302
https://doi.org/10.4049/jimmunol.174.11.7302