Zobrazeno 1 - 10
of 166
pro vyhledávání: '"Kiyoshi Endo"'
Autor:
Kiyoshi Endo, Tatsuya Hama, Atsushi Shibuya, Daisuke Miyai, Shoichi Komine, Daichi Fujino, Kuniaki Minami, Natsuki Yoshioka
Publikováno v:
Journal of Japan Society of Civil Engineers, Ser. A1 (Structural Engineering & Earthquake Engineering (SE/EE)). 76:174-179
Autor:
Yasushi Shibata, Toru Hatayama, Masahide Matsuda, Tomosato Yamazaki, Yoji Komatsu, Kiyoshi Endo, Hiroyoshi Akutsu
Publikováno v:
Journal of perioperative practice.
The detailed epidemiology and mechanism of post-craniotomy headaches are not well understood. This study aimed to establish the actual clinical incidence and causes of post-craniotomy headaches. Suboccipital craniotomy surgeries performed in six inst
Autor:
Sayaka Ito, Toshihiro Onitsuka, Hiroshi Kuroda, Natsuki Hasegawa, Hiroki Fukuda, Hiroo Gouda, Hideki Akino, Shiori Sonoki, Kiyoshi Endo, Takeshi Takayama, Keiichi Nagase, Norio Shirafuji
Publikováno v:
Regional Studies in Marine Science. 55:102527
Autor:
Tatsuya Hama, Kiyoshi Endo, Daichi Fujino, Daisuke Miyai, Atsushi Shibuya, Kuniaki Minami, Natsuki Yoshioka, Syouichi Komine
Publikováno v:
Journal of Japan Society of Civil Engineers, Ser. A1 (Structural Engineering & Earthquake Engineering (SE/EE)). 75:257-265
Autor:
Kiyoshi ENDO, Kuniaki MINAMI, Syouichi KOMINE, Daisuke MIYAI, Daichi FUJINO, Natsuki YOSHIOKA, Atsushi SHIBUYA, Tatsuya HAMA
Publikováno v:
Journal of Japan Society of Civil Engineers, Ser. A1 (Structural Engineering & Earthquake Engineering (SE/EE)). 75:305-310
Autor:
Takahiro Gotow, Chih-Yu Chang, Dae-Hwan Ahn, Mitsuru Takenaka, Kimihiko Kato, Shinichi Takagi, Chiaki Yokoyama, Kiyoshi Endo
Publikováno v:
ECS Transactions. 85:27-37
The technical challenges and viable technologies of tunneling MOSFETs (TFET) using III-V semiconductors are present in this paper. Device engineering indispensable in improving the performance of TFETs is summarized. In particular, the electrical cha
Autor:
Daisuke Miyai, Daichi Fujino, Tatsuya Hama, Natsuki Yoshioka, Atsushi Shibuya, Kuniaki Minami, Syouichi Komine, Kiyoshi Endo
Publikováno v:
Journal of Japan Society of Civil Engineers, Ser. A1 (Structural Engineering & Earthquake Engineering (SE/EE)). 74:280-289
Autor:
Masamichi Kinoshita, Takeshi Ishida, Shuich Nitta, Kiyoshi Endo, Osamu Fujiwara, Hiroaki Okajima
Publikováno v:
2017 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMCSI).
An air discharge immunity test for electronic equipment prescribed in the International Eelectrotechnical Commission (IEC) standard causes unstable testing reproducibility due to many factors such as the approach speed of an electrostatic discharge (
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBA05
The physical origin of hysteresis and reduction in sub-threshold slope (S.S.) of Si MOSFETs with atomic layer deposition (ALD) La2O3 as a gate insulator is experimentally examined through the electrical measurements of the time and temperature depend
Supreme Court 10 June 2008 Case No.890 of 2006 Company Split and Liability of the Succeeding Company
Autor:
Kiyoshi, Endo
Publikováno v:
東洋法学 = Toyohogaku. 55(2):175-191