Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Kiyoshi Awai"'
Autor:
Takahiro Yamada, Kiyoshi Awai, T. Nebiki, Tetsuya Yamamoto, Seiichi Kishimoto, T. Narusawa, Hisao Makino
Publikováno v:
Superlattices and Microstructures. 42:68-73
Polycrystalline Ga-doped (Ga content: 4 wt%) ZnO (GZO) thin films were deposited on glass substrates at 200 ∘C by a reactive plasma deposition with DC arc discharge technique. The dependences of structural and electrical properties of GZO films on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c1a1874a0d8a6a86bddbfd041c45bfd
https://doi.org/10.1016/j.spmi.2007.04.080
https://doi.org/10.1016/j.spmi.2007.04.080
Publikováno v:
Superlattices and Microstructures. 39:218-228
Measurements of Hall effect, optical transmittance, reflectance and photoluminescence (PL) have been carried out on large area (1 m wide) polycrystalline Ga-doped ZnO (GZO) films prepared by a reactive plasma deposition (RPD) method using two plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d97cad536e8a3bbe5e38176a39ec9a7a
https://doi.org/10.1016/j.spmi.2005.08.045
https://doi.org/10.1016/j.spmi.2005.08.045
Autor:
Takahiro Yamada, T. Mitsunaga, Tetsuya Yamamoto, Toshiyuki Sakemi, Kiyoshi Awai, Sho Shirakata, K. Ikeda, Seiichi Kishimoto, Minoru Osada, Hisao Makino
Publikováno v:
Superlattices and Microstructures. 38:369-376
The dependences of lattice constant, crystallite size and internal strain in the (100) direction for Ga-doped ZnO (GZO; Ga content, 3 wt%) films on O 2 gas flow rate (0–20 sccm) during deposition were investigated. GZO films have been prepared by r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eba25cba00c2f990fd3bfdc27a43dc4
https://doi.org/10.1016/j.spmi.2005.08.007
https://doi.org/10.1016/j.spmi.2005.08.007
Autor:
Paul Fons, Kiyoshi Awai, Hitoshi Tampo, Kakuya Iwata, Akimasa Yamada, S. Niki, Shogo Ishizuka, Toshiyuki Sakemi, Koji Matsubara, Sho Shirakata, Tetsuya Yamamoto, Keiichiro Sakurai
Publikováno v:
Thin Solid Films. :199-203
Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure–slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17d8f2242039a82c620a202fdfed0ad0
https://doi.org/10.1016/j.tsf.2004.11.072
https://doi.org/10.1016/j.tsf.2004.11.072
Autor:
Kiyoshi Awai, Kentaro Sakai, Tetsuo Ikari, Kenji Yoshino, H. Sakemi, Hironori Komaki, T. Kakeno, Tetsuya Yamamoto
Publikováno v:
Materials Science and Engineering: B. 118:70-73
Undoped and Ga-doped (3 wt.%) n-type ZnO thin films were grown by a reactive plasma deposition method on glass substrates at 200 °C under oxygen flow rate from 0 to 50 sccm. Piezoelectric photothermal spectroscopy (PPTS) was measured for characteriz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d4630b068fc4bf48551098f48b093d5
https://doi.org/10.1016/j.mseb.2004.12.014
https://doi.org/10.1016/j.mseb.2004.12.014
Publikováno v:
Thin Solid Films. :439-442
Transparent and conductive Ga-doped ZnO films have been deposited at a glass substrate temperature of 200 °C using an ion plating system. The resistivity as low as 2.7×10−4 Ω cm with a high carrier concentration of 8×1020 cm−3, Hall mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e1724ab92ae85d0f24c7a441a3cfa5d
https://doi.org/10.1016/j.tsf.2003.10.138
https://doi.org/10.1016/j.tsf.2003.10.138
Autor:
Keiichiro Sakurai, Kakuya Iwata, Kiyoshi Awai, Hitoshi Tampo, Tetsuya Yamamoto, Toshiyuki Sakemi, M. Matsubara, S. Niki, Shogo Ishizuka, Paul Fons, Akimasa Yamada
Publikováno v:
Thin Solid Films. :219-223
The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320884fec68c9c6aeb609a556d58903e
https://doi.org/10.1016/j.tsf.2003.10.095
https://doi.org/10.1016/j.tsf.2003.10.095
Publikováno v:
Thin Solid Films. :212-218
Optical and electrical properties have been studied on thin polycrystalline ZnO films deposited on a glass substrate by Uramoto–Tanaka type ion plating (DC-arc ion-plating) method with relation to the oxygen flow rate (OFR) in the deposition chambe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77c101b28a55f2dc529d68b5a89ae7ab
https://doi.org/10.1016/j.tsf.2003.10.093
https://doi.org/10.1016/j.tsf.2003.10.093
Publikováno v:
SHINKU. 47:742-747
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea25d9e46b12e0263a5e5d66d3fc0412
https://doi.org/10.3131/jvsj.47.742
https://doi.org/10.3131/jvsj.47.742
Publikováno v:
Thin Solid Films. 445:278-283
Optical and electrical properties were studied on thin polycrystalline ZnO films (200-nm thick) deposited on glass substrates at 200 °C by a DC-arc ion plating method (URamoto-Tanaka-type ion plating method). Effects of the oxygen flow rate (OFR) on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0a8255d5e1beefa4a2dfd5470962f83
https://doi.org/10.1016/s0040-6090(03)01161-1
https://doi.org/10.1016/s0040-6090(03)01161-1