Výsledky vyhledávání - "Kiyomi Katsuyama"

Analysis of surface damage induced in silicon substrates by reactive ion etching of silicon dioxide

Autor: Miyako Matsui, Masayuki Kojima, Takafumi Tokunaga, Kiyomi Katsuyama, Fumihiko Uchida

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1eccad3f1b21890c9a2b57a7bc8180f3
https://doi.org/10.1201/9781315140810-92

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Sacrificial CVD film etch-back process for air-gap Cu interconnects

Autor: J. Noguchi, Shoichi Uno, K. Sato, T. Oshima, Masanori Katsuyama, Kiyomi Katsuyama, Kazusato Hara

Publikováno v: Thin Solid Films. 515:4960-4965

A novel sacrificial chemical vapor deposition film etch-back process for Cu air-gap interconnects was developed. The etched-back Cu surfaces were analyzed by X-ray photoelectron spectroscopy. The electrical characteristics and the stress induced void

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24dd9d2d41d1270b87999420cab05730
https://doi.org/10.1016/j.tsf.2006.10.068

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Analysis of Post-Chemical-Mechanical-Polishing Cleaning Mechanisms for Improving Time-Dependent Dielectric Breakdown Reliability

Autor: Yasuhito Yagi, Yohei Yamada, Junji Noguchi, Nobuhiro Konishi, Naohito Ogiso, Tadakazu Miyazaki, Shoji Asaka, Kiyomi Katsuyama

Publikováno v: Journal of The Electrochemical Society. 155:H301

Using Cu/SiOC interconnects, we investigated the relationship between the time-dependent dielectric breakdown (TDDB) reliability and the cleaning process in copper chemical-mechanical polishing (CMP). We found that the formation of a nonuniform coppe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b23dddb2cc6a118180dcaa3f6231282
https://doi.org/10.1149/1.2888470

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Using Auger Electron Spectroscopy for Chemical Analysis of Plasma Damage Induced by Reactive Ion Etching of SiO2

Autor: Fumihiko Uchida, Takafumi Tokunaga, Masayuki Kojima, Miyako Matsui, Kiyomi Katsuyama

Publikováno v: Japanese Journal of Applied Physics. 37:6199

Surface damage induced by reactive ion etching (RIE) at the bottom of the pattern was investigated in terms of chemical information by Auger electron spectroscopy (AES). The Si-L23VV line shape was changed during the removal of the damage by chemical

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02370d6588ea548953a4be6f716de56b
https://doi.org/10.1143/jjap.37.6199

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Low-energy Ion Scattering Measurement of Near-surface Damage Induced by the SiO2 Dry-Etching Process

Autor: Masayuki Kojima, Fumihiko Uchida, Kiyomi Katsuyama, Miyako Matsui, Takafumi Tokunaga

Publikováno v: Japanese Journal of Applied Physics. 37:2043

Si(100) surface crystallinity after dry etching was measured using low-energy ion scattering spectroscopy (LEIS). We used 4-keV He+ ions as the incident beam, and neutral particles back-scattered at 180° were detected. A heavily damaged layer was ob

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::735d5685ef6f221a8f24ca576ad82a54
https://doi.org/10.1143/jjap.37.2043

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In-situ After-treatment Using Low-energy Dry-etching with a CF4/O2 Gas Mixture to Remove Reactive Ion Etching Damage

Autor: Takafumi Tokunaga, Miyako Matsui, Masayuki Kojima, Fumihiko Uchida, Hiromasa Arai, Yamazaki Kazuo, Kiyomi Katsuyama

Publikováno v: Japanese Journal of Applied Physics. 37:2330

We have investigated a new method of in-situ after-treatment that precisely and anisotropically removes dry-etching damage induced by reactive-ion etching (RIE) of SiO2, especially in self-aligned contact (SAC) processing, through, low-energy etching

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ceca45db3ef5584db28a672eb43d9661
https://doi.org/10.1143/jjap.37.2330

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