Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kiyomi Hagihara"'
Autor:
Naoki Torazawa, Hideaki Okamura, Tetsuya Ueda, Takeshi Harada, Tatsuya Kabe, Masayuki Watanabe, Yasunori Morinaga, Kanda Yusuke, Kohei Seo, Hayato Korogi, S. Suzuki, Susumu Matsumoto, Muneyuki Matsumoto, Shuji Hirao, Daisuke Inagaki, Kiyomi Hagihara
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P578-P583
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8331eabc7da2e6c2c90b11ccfb0701
https://doi.org/10.1149/2.0141610jss
https://doi.org/10.1149/2.0141610jss
Autor:
Akira Ohki, Shigeru Maeda, Kiyomi Hagihara, Yasuyuki Tanaka, Kensuke Naka, Yoshiyuki Tachiyama, Mituhiro Yoshimoto
Publikováno v:
Polymer Bulletin. 35:659-663
Poly[(N,N-dicarboxymethyl)allylamine] as a water-soluble polymeric chelating agent was prepared by carboxymethylation of poly(allylamine) (PAA) with chloroacetic acid or bromoacetic acid. The 1H-NMR, IR, and elementary analyses showed that the iminod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::297e91db7741fe9f6fb2323171384355
https://doi.org/10.1007/bf00294946
https://doi.org/10.1007/bf00294946
Autor:
Kazuhiro Ishikawa, Takeshi Matsumoto, Hiroshige Hirano, Kiyomi Hagihara, Fumito Itoh, Teppei Iwase, Yutaka Itoh, Yukitoshi Ota
Publikováno v:
2010 IEEE CPMT Symposium Japan.
We reveal the mechanism of assembly stress in pad areas of flip chip package by using our new local stress evaluation technique in μm resolution. The technique is designed to evaluate the characteristic change of high-k/metal gate transistors (Trs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3f029e6bcef0caacaad12353223e591
https://doi.org/10.1109/cpmtsympj.2010.5680424
https://doi.org/10.1109/cpmtsympj.2010.5680424
Autor:
Kiyomi Hagihara, Takeshi Matsumoto, Yutaka Itoh, Teppei Iwase, Hiroshige Hirano, Kazuhiro Ishikawa, Yukitoshi Ota, Fumito Itoh
Publikováno v:
2010 Symposium on VLSI Technology.
We reveal the mechanism of assembly stress in pad areas of flip chip package by using our new local stress evaluation technique in µm resolution. The technique is designed to evaluate the characteristic change of high-k/metal gate transistors (Trs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe29430f90a62de4aeb8335a250209f4
https://doi.org/10.1109/vlsit.2010.5556189
https://doi.org/10.1109/vlsit.2010.5556189
Autor:
Tetsuya Ueda, Kanda Yusuke, Shuji Hirao, Kohei Seo, H. Okamura, K. Tomiyama, Daisuke Inagaki, Kotaro Nomura, Susumu Matsumoto, Kiyomi Hagihara, A. Iwasaki, Naoki Torazawa, T. Shigetoshi, Masayuki Watanabe, S. Suzuki, Toru Hinomura, Hayato Korogi, J. Shibata, T. Hamatani, Makoto Tsutsue, K. Tashiro, Takeshi Harada, Tatsuya Kabe, Muneyuki Matsumoto, Yasunori Morinaga, H. Shimizu, K. Kobayashi, T. Sasaki
Publikováno v:
2010 IEEE International Interconnect Technology Conference.
High performance 32nm-node interconnect with ELK (Extremely Low-k, k=3D2.4) has been demonstrated. To suppress process damage and enlarge the via-line space with a wide lithography process margin, robust ELK film with a metal hard mask (MHM) self-ali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5c2d7556c7a3286d7f9b538bd27a00
https://doi.org/10.1109/iitc.2010.5510707
https://doi.org/10.1109/iitc.2010.5510707