Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Kiyomasa Sugii"'
Publikováno v:
Hyomen Kagaku. 14:105-112
Initial growth stages of Ge on Si (111) are studied from the viewpoint of intermixing of Si into the epitaxial Ge layer. Defect formation in the Ge islands was characterized by using moire patterns taken by transmission electron microscopy (TEM). Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67cbb97ed543a42fc1f0e1da13a2fb7d
https://doi.org/10.1380/jsssj.14.105
https://doi.org/10.1380/jsssj.14.105
Publikováno v:
ChemInform. 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24869b4a016f5874628104788f4f9264
https://doi.org/10.1002/chin.199126284
https://doi.org/10.1002/chin.199126284
Autor:
C. Heimlich, M. Seki, Kiyomasa Sugii, Yukinobu Shinoda, Hiroki Hibino, Yoshihiro Kobayashi, Takashi Nishioka, N. Shimizu, S. Ishizawa
Publikováno v:
Applied Surface Science. :112-119
Reconstruction and the surface morphology of Ge layers on Si(111)7 × 7 during the initial growth stages were studied by reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM). The behavior of the Ge layer subj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6e2593b2f17e8f75aabce218cdf589b
https://doi.org/10.1016/0169-4332(92)90403-k
https://doi.org/10.1016/0169-4332(92)90403-k
Publikováno v:
Applied Surface Science. :619-624
GaAs(001) surfaces treated with ultrasonic running deionized water (URDIW), after being etched by H2SO4 or NH4OH were examined by using X-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED), XPS analysis revea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::406dfd2b9a664a7992d9b19679317cb9
https://doi.org/10.1016/0169-4332(92)90485-g
https://doi.org/10.1016/0169-4332(92)90485-g
Publikováno v:
Journal of The Electrochemical Society. 138:799-802
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e20145e91ea19e3b131b5c4a4d1f57f
https://doi.org/10.1149/1.2085678
https://doi.org/10.1149/1.2085678
Publikováno v:
Hyomen Kagaku. 12:380-392
Dissolution of arsenic and gallium oxides on GaAs surface during running deionized water (RDIW) and ultrasonic-running deionized water (U-RDIW) treatments is investigated by X-ray photoelectron spectroscopy (XPS). The U-RDIW treated (001) GaAs surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5c693e279e1092ebedfc628f52e15c1
https://doi.org/10.1380/jsssj.12.380
https://doi.org/10.1380/jsssj.12.380
Publikováno v:
Hyomen Kagaku. 11:500-506
The analysis of the reflection high energy electron diffraction (RHEED) patterns from the vicinal Si(111) (misoriented 1°-6° from [111] to [112]) and (100) surfaces (misoriented 0.4°-4° from [100] to [011]) clarified the differences in step struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f73698d2ec44bd078168ceb16900980
https://doi.org/10.1380/jsssj.11.500
https://doi.org/10.1380/jsssj.11.500
Autor:
Kiyomasa Sugii, Koichi Nakagawa, Kazuo Fujiura, Yukio Terunuma, Yasutake Ohishi, Shoichi Sudo, Terutoshi Kanamori
Publikováno v:
Applied Physics Letters. 67:3063-3065
The crystallization properties of ZrF4‐based fluoride glasses containing PbF2 are clarified and single‐mode fibers for an optical amplifier operating at 1.3 μm are fabricated. The crystallization tendency increases as the PbF2 content of the gla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0d92cccf589a4b3bfed27c8f51a8f76
https://doi.org/10.1063/1.114865
https://doi.org/10.1063/1.114865
Publikováno v:
Applied Physics Letters. 59:3410-3412
(001) GaAs surfaces treated with ultrasonic‐running de‐ionized water (U‐RDIW) after NH4OH/H2O2/H2O etching are investigated by reflection high‐energy electron diffraction (RHEED) and by x‐ray photoelectron spectroscopy (XPS). RHEED observat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da0c1ca07a158cb22a44d209a28a082
https://doi.org/10.1063/1.105691
https://doi.org/10.1063/1.105691
Publikováno v:
Applied Physics Letters. 58:2794-2796
GaAs (001) surface ultrasonically cleaned under running de‐ionized water (U‐RDIW) is investigated by reflection high‐energy electron diffraction (RHEED). The RHEED observations of U‐RDIW‐treated surfaces show a spotty (1×1) pattern at room
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de06436c1b1b2ebb382f9ea0780ba867
https://doi.org/10.1063/1.104764
https://doi.org/10.1063/1.104764