Zobrazeno 1 - 10
of 276
pro vyhledávání: '"Kiyokazu Nakagawa"'
Autor:
Shiori Konoshima, Eisuke Yonekura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano
Publikováno v:
AIP Advances, Vol 8, Iss 7, Pp 075112-075112-9 (2018)
Uniaxially strained Ge/SiGe heterostructures are fabricated by selective ion implantation technique, where dislocation alignments are highly controlled by the local defect introduction. Firstly, ion-implantation-defects are selectively induced into
Externí odkaz:
https://doaj.org/article/35406616a0c84a84ae69062828a93957
Autor:
Taisuke Fujisawa, Atsushi Onogawa, Miki Horiuchi, Yuichi Sano, Chihiro Sakata, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa, Keisuke Arimoto
Publikováno v:
Materials Science in Semiconductor Processing. 161:107476
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48970eb51679ba72b3c9ce3ab4be87e0
https://doi.org/10.1016/j.mssp.2023.107476
https://doi.org/10.1016/j.mssp.2023.107476
Autor:
Kentarou Sawano, Noritaka Usami, Kiyokazu Nakagawa, Junji Yamanaka, Keisuke Arimoto, Kosuke O. Hara
Publikováno v:
ECS Transactions. 98:277-290
Strain engineering of group IV semiconductors has been extensively investigated with an aim to produce high mobility platform for high performance electronic devices. In particular, combination of strain and 3D structures requires elaborate engineeri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc5e2d105e6ab3beace7ad70e432cd91
https://doi.org/10.1149/09805.0277ecst
https://doi.org/10.1149/09805.0277ecst
Autor:
Keisuke Arimoto, Shingo Saito, Atsushi Onogawa, Junji Yamanaka, Kosuke O. Hara, Yuichi Sano, Kiyokazu Nakagawa
Publikováno v:
Microscopy and Microanalysis. 26:286-288
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::323035413f2a4c36d36356ea920caed7
https://doi.org/10.1017/s1431927620014075
https://doi.org/10.1017/s1431927620014075
Publikováno v:
Journal of Materials Research. 33:2297-2305
For fabricating photovoltaic BaSi2 films with controlled carrier density and suppressed oxidation by thermal evaporation, the mechanism determining the film composition from incongruently evaporated BaSi2 must be elucidated. We investigated the effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f113503943d3106cdaf7133f8ececd6f
https://doi.org/10.1557/jmr.2018.181
https://doi.org/10.1557/jmr.2018.181
Publikováno v:
MRS Advances. 3:1387-1392
Thermal evaporation is a simple method to fabricate a BaSi2 film, a new solar cell material consisting of earth-abundant elements. In this study, we optimized the evaporation process and suppressed near-interface oxidation in evaporated BaSi2 films o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::703f29e2a4901a5f6c11695f9f2d3bcc
https://doi.org/10.1557/adv.2018.31
https://doi.org/10.1557/adv.2018.31
Autor:
Junji Yamanaka, Toshiyuki Takamatsu, Tetsuji Arai, Keisuke Arimoto, Hiroki Nakaie, Kiyokazu Nakagawa, Kazuki Kamimura
Publikováno v:
Journal of Materials Science and Chemical Engineering. :19-24
We have developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.0 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 5 sccm. We confirmed that the temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29b33adbd163de3677b104d5639b0b4f
https://doi.org/10.4236/msce.2018.61003
https://doi.org/10.4236/msce.2018.61003
Autor:
Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Naoto Utsuyama, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa
Publikováno v:
Journal of Materials Science and Chemical Engineering. :25-31
Lattice-strained Si thin films grown onto SiGe(110)/Si(110) are attracting because of their potential to realize high-speed transistors. In this study we observe surface morphology of Si/SiGe/Si(110) using scanning electron microscopy and we also obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::878a584616b37c76097c05a09574a595
https://doi.org/10.4236/msce.2018.61004
https://doi.org/10.4236/msce.2018.61004
Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré
Autor:
Mai Shirakura, Akimitsu Ishizuka, Chiaya Yamamoto, Takane Yamada, Kei Sato, Kazuo Ishizuka, Kiyokazu Nakagawa, Junji Yamanaka, Kosuke O. Hara, Keisuke Arimoto
Publikováno v:
Journal of Materials Science and Chemical Engineering. :8-15
A moire between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54512c4a5222bbd768d1a079d3953892
https://doi.org/10.4236/msce.2018.67002
https://doi.org/10.4236/msce.2018.67002
Autor:
Atsushi Onogawa, Daichi Namiuchi, Yuichi Sano, Kiyokazu Nakagawa, Taisuke Fujisawa, Keisuke Arimoto, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano
Publikováno v:
Journal of Crystal Growth. 571:126246
Strained Si/relaxed SiGe/Si(1 1 0) heterostructures are gaining interest as an attractive candidate for a Si-wafer-based material for semiconductor devices with enhanced performances and lower power consumption, since a significant enhancement of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f1f0b4e01170a6a008098754c13817b
https://doi.org/10.1016/j.jcrysgro.2021.126246
https://doi.org/10.1016/j.jcrysgro.2021.126246