Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Kiyohito Hirai"'
Publikováno v:
Journal of the Society of Materials Science, Japan. 51:1235-1241
High temperature oxidation behavior of Si3N4-based ceramics was investigated systematically. The test has been made at 13000C in dry air environment up to 2000 hours. The Si3N4 specimens tested were as follows. a) S-1: Si3N4 added 8mass% Y2O3. b) S-2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a0bb9192360cf50ee6c1ddb0b964564
https://doi.org/10.2472/jsms.51.1235
https://doi.org/10.2472/jsms.51.1235
Autor:
Toshitaka Satsuta, Kiyohito Hirai
Publikováno v:
Journal of The Japan Society of Electrical Machining Engineers. 35:36-43
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f0eddf8cbdfbd2148c068a4413b9c4e
https://doi.org/10.2526/jseme.35.80_36
https://doi.org/10.2526/jseme.35.80_36
Publikováno v:
Journal of The Japan Society of Electrical Machining Engineers. 34:22-29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d37ae20640c06960a43fd7def2e8bd1a
https://doi.org/10.2526/jseme.34.22
https://doi.org/10.2526/jseme.34.22
Autor:
Hiromichi Takano, Toshinori Takagi, Masanori Sakaguchi, Shuuji Sunairi, Masanori Watanabe, Masao Kumagai, Katsuhiro Yokota, Naoto Emi, Kiyohito Hirai
Publikováno v:
Materials Chemistry and Physics. 54:84-87
C + -implanted GaAs that the surfaces were encapsulated with 2×10 20 cm −3 As-doped a-Si:H films were annealed at temperatures of 850–1000 °C. Carriers were generated only in a shallower region than the projected range of the C + ions. The shee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d226a9043d24d1dd85ddbfa866ac71c2
https://doi.org/10.1016/s0254-0584(98)00028-5
https://doi.org/10.1016/s0254-0584(98)00028-5
Autor:
Hiromichi Takano, Katsuhiro Yokota, Kouichi Hosokawa, Masao Kumagai, K. Matsuda, Kouichiro Terada, Yasunori Ando, Kiyohito Hirai
Publikováno v:
Journal of The Electrochemical Society. 145:1026-1033
Silicon that is heavily doped with arsenic was treated in a microwave hydrogen plasma at temperatures of 530-600 °C. This hydrogenation increased the carrier concentration in the surface region where the concentration of As exceeded about 2 x 10 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b755b77e1df5954e698e6fd957f2ba9
https://doi.org/10.1149/1.1838383
https://doi.org/10.1149/1.1838383
Autor:
Hiromichi Takano, Hiroki Inohara, Akiyoshi Chayahara, Susumu Tamura, Mamoru Satho, Hiromi Nakanishi, Katsuhiro Yokota, Kiyohito Hirai, Yuuji Horino, Masanori Sakaguchi, Mashao Kumagaya
Publikováno v:
Solid-State Electronics. 37:9-15
The surface of GaAs implanted with 100 keV Mg + ions at a dose of 1 × 10 15 cm −2 was encapsulated with As-doped a-Si:H with a thickness of about 80 nm. The sheet carrier concentration in thermally annealed samples increased with an increase in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2495808fbf6dc08c5b82b8b922c53c5
https://doi.org/10.1016/0038-1101(94)90097-3
https://doi.org/10.1016/0038-1101(94)90097-3
Autor:
Mamoru Yoshimoto, Tetsuya Okuda, Yu Motoizumi, Yasuhiro Naganuma, Koji Suzuki, Masayasu Soga, Satoru Kaneko, Takeshi Ozawa, Takeshi Ito, Yasuo Hirabayashi, Kiyohito Hirai
Publikováno v:
Talanta. 84(2)
Metal oxide nanoparticles prepared by pulsed laser deposition (PLD) were applied to nonenzymatic glucose detection. NiO nanoparticles with size of 3 nm were deposited on glassy carbon (GC) and silicon substrates at room temperature in an oxygen atmos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e65d2a19fdb1bcf5dad05bd91c2b6940
https://pubmed.ncbi.nlm.nih.gov/21376990
https://pubmed.ncbi.nlm.nih.gov/21376990
Autor:
Yasunori Ando, K. Matsuda, Katsuhiro Yokota, Masao Kumagai, Kiyohito Hirai, Hiromichi Takano, Kouichi Hosokawa, Kouichiro Terada
Publikováno v:
ChemInform. 29
Silicon that is heavily doped with arsenic was treated in a microwave hydrogen plasma at temperatures of 530-600 °C. This hydrogenation increased the carrier concentration in the surface region where the concentration of As exceeded about 2 x 10 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b948e61d8d46b45c0294ff7052d93a20
https://doi.org/10.1002/chin.199821230
https://doi.org/10.1002/chin.199821230
Autor:
Hiromichi Takano, Katsuhiro Yokota, Toshinori Takagi, Masao Kumagai, Masanori Sakaguchi, Kiyohito Hirai, Masanori Watanabe, Akira Shiomi, Haruya Mori
2keV S + ions were implanted into un-doped semi-insulating GaAs wafers with doses of 3×10 13 -3×10 14 cm -2 at room temperature. The samples were annealed at 850-1000°C after encapsulation with an As-doped a-Si:H film. The sheet carrier concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2790e5f4043f1260044e17b37e47ff19
https://doi.org/10.1016/b978-0-444-82334-2.50174-x
https://doi.org/10.1016/b978-0-444-82334-2.50174-x
Autor:
Ryutaro Maeda, Kiyohito Hirai, Manabu Yasui, Masaharu Takahashi, Yu Motoizumi, Koh-ichi Sugimoto, Yasuo Hirabayashi, Satoru Kaneko
Publikováno v:
Japanese Journal of Applied Physics. 48:06FH08
We propose the Ni–W plating film as a mold material for the hot embossing of borosilicate glass. The lifetime of a Ni–W plating mold is important from a practical perspective. However, there have been no previous reports on the life of a mold. Co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::747d5eaaab481c7cf1f3b35e7d004316
https://doi.org/10.1143/jjap.48.06fh08
https://doi.org/10.1143/jjap.48.06fh08