Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Kiyohiro Matsushita"'
Autor:
H. Sprey, D. De Roest, J. Labat, Nobuyoshi Kobayashi, Craig Huffman, Patrick Verdonck, Kiyohiro Matsushita, J. Beynet, Gerald Beyer, Shinya Kaneko, Youssef Travaly
Publikováno v:
Microelectronic Engineering. 87:311-315
This article describes less explored solutions to improve interconnect performance without changing established steps (etch, strip, clean, CMP) in a sub-100nm integration route. Process conditions of the porogen-based low-k are adjusted by (1) varyin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcf2ebbc95d33e57d77f1874d0d27319
https://doi.org/10.1016/j.mee.2009.06.036
https://doi.org/10.1016/j.mee.2009.06.036
Autor:
H. Sprey, Kenichi Kagami, Kiyohiro Matsushita, Nobuyoshi Kobayashi, Nathan Kemeling, Shinya Kaneko, Manabu Kato, Naoto Tsuji, David De Roest
Publikováno v:
Microelectronic Engineering. 84:2575-2581
Aurora^(R)ELK films were fabricated by PE-CVD of a SiCOH matrix precursor and an organic porogen material. The porogen material is removed during a subsequent thermally assisted UV-cure step with a short wavelength UV-lamp (@l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f10909f67e211077c69e616ba4621e2
https://doi.org/10.1016/j.mee.2007.05.025
https://doi.org/10.1016/j.mee.2007.05.025
Autor:
H. Sprey, Nathan Kemeling, David De Roest, Youssef Travaly, Naoto Tsuji, Rudy Caluwaerts, Kiyohiro Matsushita, Shinya Kaneko, Patrick Verdonck, Gerald Beyer, Marc Schaekers
Publikováno v:
Surface and Coatings Technology. 201:9264-9268
A promising method to produce low- k films with a dielectric constant, k , less than 2.3, consists in using a porogen-based PECVD process in combination with UV cure for both porogen removal and thermo-mechanical properties enhancement. Aurora® ELK
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd4b130fc9bf626386f7501b4cf1b1b
https://doi.org/10.1016/j.surfcoat.2007.04.096
https://doi.org/10.1016/j.surfcoat.2007.04.096
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
A pore sealing process by Plasma-enhanced ALD (PEALD) with an amino-silane precursor has been developed, which enabled simultaneous restoration and pore-sealing film formation on damaged low-k film with k = 2.0. The precursor adsorbed preferentially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a619699ce0713e36472047c9f802c03
https://doi.org/10.1109/iitc.2013.6615567
https://doi.org/10.1109/iitc.2013.6615567
Autor:
Kiyohiro Matsushita, Nobuyoshi Kobayashi, Dai Ishikawa, Akiko Kobayashi, Akinori Nakano, Yosuke Kimura
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
In order to implement highly porous PECVD SiOCH films with k = 2.0 in ILD integration, the UV-assisted restoration to remove plasma damages related with dry etch and pore sealing by plasma enhanced ALD (PEALD)-SiN formation to prevent the metal penet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::460670a8919b85a04e34c400e081ae49
https://doi.org/10.1109/iitc.2012.6251572
https://doi.org/10.1109/iitc.2012.6251572
Autor:
M. Kato, K. Yoneda, S. Nakao, Y. Kamigaki, Kiyohiro Matsushita, Nobuyoshi Kobayashi, N. Matsuki, N. Ohara, S. Kaneko, A. Fukazawa
Publikováno v:
2006 International Interconnect Technology Conference.
A robust low-k diffusion barrier, i.e., advanced SiC(O) (A-SiC(O), k = 3.5), was developed to attain a keff of less than 2.7 for reliable ultra-low-k/Cu integration for 45-nm node technology and beyond. A new precursor that requires that requires no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2c1415464be14a4e63c132f97009f58
https://doi.org/10.1109/iitc.2006.1648683
https://doi.org/10.1109/iitc.2006.1648683
Autor:
T. Kimura, A. Fukazawa, S. Kondo, K. Yoneda, Nobuyoshi Kobayashi, N. Matsuki, Kiyohiro Matsushita, N. Ohara, M. Kato
Publikováno v:
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..
An ultra violet (UV) cure was investigated to improve the mechanical and electrical properties of porous carbon-doped PECVD (plasma enhanced chemical vapor deposition) oxide film (k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60a8214e20a15347e15be90074c9d3e3
https://doi.org/10.1109/iitc.2005.1499989
https://doi.org/10.1109/iitc.2005.1499989
Autor:
Yosuke Kimura, Akiko Kobayashi, Akinori Nakano, Adrian Kiermasz, Gary Ditmer, Kiyohiro Matsushita, Nobuyoshi Kobayashi, Dai Ishikawa
Publikováno v:
Japanese Journal of Applied Physics. 52:05FG01
We have investigated plasma-enhanced atomic layer deposition (PEALD) SiN pore-sealing film formation and diffusion behavior on highly porous SiOCH films. Mass measurement revealed the diffusion of the precursor used in PEALD into pores of SiOCH films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f23399e23d0336d4b787bda9604524
https://doi.org/10.7567/jjap.52.05fg01
https://doi.org/10.7567/jjap.52.05fg01
Autor:
Yosuke Kimura, Dai Ishikawa, Akinori Nakano, Akiko Kobayashi, Kiyohiro Matsushita, David de Roest, Nobuyoshi Kobayashi
Publikováno v:
Japanese Journal of Applied Physics. 51:05EC04
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff91ab98bb247ae1d2731fea1c39b3cd
https://doi.org/10.7567/jjap.51.05ec04
https://doi.org/10.7567/jjap.51.05ec04
Autor:
Dai Ishikawa, Akiko Kobayashi, Nobuyoshi Kobayashi, Yosuke Kimura, Kiyohiro Matsushita, David De Roest, Akinori Nakano
Publikováno v:
Japanese Journal of Applied Physics. 51:05EC04
We investigated the effects of UV-assisted restoration on porous plasma-enhanced chemical vapor deposition (PECVD) SiOCH films with k = 2.0 and 2.3 having high porosities. By applying the UV-assisted restoration to O2-plasma-damaged films with k = 2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a9feaff43c9df746d158250e56a4999
https://doi.org/10.1143/jjap.51.05ec04
https://doi.org/10.1143/jjap.51.05ec04