Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kiyohiko Okada"'
Autor:
Toshiro Tani, G. Shinomiya, Shuji Nakamura, Tsunemasa Taguchi, Kiyohiko Okada, Yoichi Yamada, Fumio Sasaki, Shunsuke Kobayashi
Publikováno v:
Japanese Journal of Applied Physics. 35:L787
Excitonic luminescence from GaN epitaxial layers has been studied under high-density excitation. The first experimental evidence for biexciton formation in GaN was obtained. The binding energy of the biexciton was estimated to be 5.3 meV. Therefore,
Autor:
Tsunemasa Taguchi, Ayako Kai, Yoichi Yamada, Hitofumi Taniguchi, Fumio Sasaki, Toshiro Tani, Kiyohiko Okada, Shunsuke Kobayashi
Publikováno v:
Japanese Journal of Applied Physics. 35:1424
Hexagonal gallium nitride (GaN) films are grown on aluminum nitride ceramic substrates in gallium and nitrogen plasmas excited by microwaves. The band-edge photoluminescence properties of the GaN films are investigated at 77 K and at room temperature