Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kiyoharu Mori"'
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
° A physical vapor deposition (PVD) formed WNi thinfilm over M1 (metal level 1) after its revealing in the via-last through-Si-via (TSV) process has been investigated for its ability in protecting the M1 metal during electroless (EL) plating of barr
Autor:
Makoto Motoyoshi, Takafumi Fukushima, Mitsumasa Koyanagi, Ai Nakamura, Yisang Lee, Jichoel Bea, Shigeru Watariguchi, Kiyoharu Mori, Murugesan Murugesan
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
Si interposer with 10 μm-width, 100 μm-deep through-silicon via (TSV) has been fabricated using electroless (EL) Ni as barrier and seed layers, and characterized for their electrical resistance. The chemistry of electroless-Ni plating bath was meti
Publikováno v:
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
A feasibility study was carried out for self-formation of metal wiring between LSI chips containing ultrafine-pitch Cu landing pads by employing a new concept of directed self-assembly (DSA) phenomena. Preliminary results suggest that it is highly fe
Publikováno v:
Pathology International. 5:1-19
Publikováno v:
Pathology International. 5:77-95
Publikováno v:
Pathology International. 3:44-51
Publikováno v:
Pathology International. 3:84-94
Publikováno v:
Pathology International. 7:211-218
Publikováno v:
Pathology International. 6:77-98