Výsledky vyhledávání

Report

Preparation and Readout of Multielectron High-Spin States in a Gate-Defined GaAs/AlGaAs Quantum Dot

Autor: Kiyama, H., Yoshimi, K., Kato, T., Nakajima, T., Oiwa, A., Tarucha, S.

Publikováno v: Physical Review Letters 127, 086802 (2021)

We report the preparation and readout of multielectron high-spin states, a three-electron quartet, and a four-electron quintet, in a gate-defined GaAs/AlGaAs single quantum dot using spin filtering by quantum Hall edge states coupled to the dot. The

Externí odkaz: http://arxiv.org/abs/2108.13663

Zobrazit plný text záznamu

Report

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

Autor: Allison, G., Fujita, T., Morimoto, K., Teraoka, S., Larsson, M., Kiyama, H., Oiwa, A., Haffouz, S., Austing, D. G., Ludwig, A., Wieck, A. D., Tarucha, S.

Publikováno v: Physical Review B, 90, 235310 (2014)

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resona

Externí odkaz: http://arxiv.org/abs/1412.6260

Zobrazit plný text záznamu

Report

Single Photoelectron Detection after Selective Excitation of Electron-Heavy Hole and Electron-Light Hole Pairs in Double Quantum Dots

Autor: Morimoto, K., Fujita, T., Allison, G., Teraoka, S., Larsson, M., Kiyama, H., Haffouz, S., Austing, D. G., Ludwig, A., Wieck, A. D., Oiwa, A., Tarucha, S.

We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photo

Externí odkaz: http://arxiv.org/abs/1401.4669

Zobrazit plný text záznamu