Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Kiwamu Sakuma"'
Autor:
Taro Shiokawa, Reika Ichihara, Takamasa Hamai, Kiwamu Sakuma, Kota Takahashi, Kazuhiro Matsuo, Masumi Saitoh
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Takamasa Hamai, Kunifumi Suzuki, Reika Ichihara, Yusuke Higashi, Yoko Yoshimura, Kiwamu Sakuma, Kensuke Ota, Kota Takahashi, Kazuhiro Matsuo, Shosuke Fujii, Masumi Saitoh
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Reika Ichihara, Yusuke Higashi, Kunifumi Suzuki, Haruka Kusai, Yoko Yoshimura, Takamasa Hamai, Yuta Kamiya, Kota Takahashi, Kazuhiro Matsuo, Yasushi Nakasaki, Hidenori Miyagawa, Masamichi Suzuki, Kiwamu Sakuma, Yuuichi Kamimuta, Masumi Saitoh
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Autor:
Keisuke Takano, Masumi Saitoh, Kota Takahashi, Shosuke Fujii, Keisuke Akari, Marina Yamaguchi, Yuta Kamiya, Reika Ichihara, Kazuhiro Matsuo, Kiwamu Sakuma, Kunifumi Suzuki, Yuuichi Kamimuta, Kensuke Ota
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We present the recent progress in HfO 2 -based ferroelectric FET (FeFET) and ferroelectric tunnel junction (FTJ) memory towards low-power and high-density storage and AI applications. A huge amount of interface trap charges coupled to spontaneous pol
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Autor:
Masumi Saitoh, Yuta Kamiya, Kunifumi Suzuki, Kazuhiro Matsuo, Kiwamu Sakuma, Keisuke Takano, Haruka Kusai, Hidenori Miyazawa, Keisuke Akari, Yuuichi Kamimuta, Keiko Ariyoshi, Kota Takahashi, Reika Ichihara
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We re-examine the dominant factors of the memory window (MW) and reliability of HfO 2 FeFET using a new technique to extract both spontaneous polarization $(\mathrm{P}_{\mathrm{s}})$ and interface trap charges $(\mathrm{Q}_{\mathrm{t}})$ by one-time
Autor:
Masumi Saitoh, Minoru Oda, Kensuke Ota, Yoko Yoshimura, Shoichi Kabuyanagi, Yuuichi Kamimuta, Marina Yamaguchi, Shosuke Fujii, Kiwamu Sakuma
Publikováno v:
ESSDERC
We present excellent performance of the two key devices in future 3D-LSI, HfO 2 ferroelectric tunnel junction (FTJ) memory and poly-Si nanowire transistors. HfO 2 FTJ has advantages such as CMOS compatibility, low operation current, self-compliance,
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
We successfully established the direct correspondence between the whole channel crystallinity at nm-scale and electrical property in one and the same poly-Si thin-film transistors (TFTs). A low-damage focused ion beam (FIB) technique was newly develo
Publikováno v:
ECS Transactions. 64:113-123
The interface-state generation mechanism and its impact on reliability properties, such as endurance and data retention, in MONOS devices have been studied. The charge measurement technique we developed has demonstrated that holes injected during era
Autor:
Kouichi Muraoka, Tetsufumi Tanamoto, Atsuhiro Kinoshita, Fujita Shinobu, Kosuke Tatsumura, Kiwamu Sakuma
Publikováno v:
IEEE Transactions on Electron Devices. 59:3255-3262
We theoretically investigate the self-adjustment mechanism of the threshold voltage shift of the static random access memory (SRAM) based on the double-floating-gate (DFG) structure by considering the capacitive coupling between the neighboring DFGs.