Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kisung Jeon"'
Autor:
Won-Hwa Park, Youngil Jang, Hui-Youn Shin, Myungshin Choi, Kisung Jeon, Mingu Gang, Kyuho Park
Publikováno v:
Journal of the Korean Physical Society. 63:1621-1624
Due to the large differences in the lattice constants and the thermal expansion coefficients between GaN and Si, GaN growth on a Si substrate usually leads initially to high defect densities and cracks. If high-quality GaN films on Si substrate are t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b72db737df0ed8789c821e1faa0c2c97
https://doi.org/10.3938/jkps.63.1621
https://doi.org/10.3938/jkps.63.1621
Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire.
Autor:
Shin, Huiyoun, Jeon, Kisung, Jang, Youngil, Gang, Mingu, Choi, Myungshin, Park, Wonhwa, Park, Kyuho
Publikováno v:
Journal of the Korean Physical Society; Oct2013, Vol. 63 Issue 8, p1621-1624, 4p