Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Kishwar Mashooq"'
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 4, Pp 1-11 (2018)
AlGaN-based deep ultraviolet (UV) light-emitting diodes (LEDs) are attractive for a wide range of applications. To date, however, the best reported external quantum efficiency (EQE) for LEDs operating in the wavelength range of ~240 nm is well below
Externí odkaz:
https://doaj.org/article/6fa662163b354e0f9c82dbfadac10e25
Publikováno v:
IEEE Transactions on Electron Devices. 69:2436-2442
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad25b01dd98f9cbaacf4b4c7ba5db13d
https://doi.org/10.1109/ted.2022.3162803
https://doi.org/10.1109/ted.2022.3162803
Autor:
Rebecca L. Peterson, Julia D. Lenef, Kishwar Mashooq, Neil P. Dasgupta, Orlando Trejo, Jaesung Jo
Publikováno v:
IEEE Transactions on Electron Devices. 67:5557-5563
The high Hall hole mobility ( $\mu _{Hall}$ ) of cuprous oxide (Cu2O) has caused great interest in using this semiconductor for p-type devices in a future complementary metal–oxide–semiconductor (CMOS) thin-film transistor (TFT) technology. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a626a986d5ccc47e7ec541c4a0e5996
https://doi.org/10.1109/ted.2020.3033832
https://doi.org/10.1109/ted.2020.3033832
Publikováno v:
Applied Physics Letters. 122:013504
Ambipolar materials offer a unique and simple route toward cost-effective complementary thin film circuits. SnO is one of the few metal oxide semiconductors that demonstrates ambipolar behavior. In this work, we demonstrated an ambipolar SnO inverter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f03facdb8883d87f03ef2652736b3834
https://doi.org/10.1063/5.0131057
https://doi.org/10.1063/5.0131057
Autor:
Walter Shin, David Arto Laleyan, Xianhe Liu, Zetian Mi, Ayush Pandey, Kishwar Mashooq, Mohammad Soltani, Eric T. Reid
Publikováno v:
Journal of Crystal Growth. 507:87-92
We have performed a detailed investigation of the molecular beam epitaxy of AlGaN epilayers on AlN template on sapphire substrate. The effects of various growth parameters, including nitrogen flow rate, and Al and Ga fluxes on tuning the Al compositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6059c411780a8ab2bc1d6a1b870bbba
https://doi.org/10.1016/j.jcrysgro.2018.10.048
https://doi.org/10.1016/j.jcrysgro.2018.10.048
Publikováno v:
Science Advances
Ultrasmall semiconductor lasers can improve the efficiency and resolution of next-generation displays by 10 to 100 times.
Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and au
Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and au
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::060861377c00e390bceb352d26249286
https://doi.org/10.1126/sciadv.aav7523
https://doi.org/10.1126/sciadv.aav7523
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 4, Pp 1-11 (2018)
AlGaN-based deep ultraviolet (UV) light-emitting diodes (LEDs) are attractive for a wide range of applications. To date, however, the best reported external quantum efficiency (EQE) for LEDs operating in the wavelength range of ~240 nm is well below
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c49072c621e1bcc62c68023676f9c97d
https://doi.org/10.1109/jphot.2018.2842110
https://doi.org/10.1109/jphot.2018.2842110
Autor:
Zetian Mi, Binh Huy Le, Eric T. Reid, David Arto Laleyan, Faqrul A. Chowdhury, Xianhe Liu, Srinivas Vanka, Kishwar Mashooq
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Dislocation-free III-nitride nanocrystals have emerged as the fundamental building blocks of micro LEDs, low threshold ultraviolet laser diodes, and high efficiency artificial photosynthesis. We discuss the epitaxy, structural, electronic, and optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c5eb9fda3b68edf7c4cf724f15d4c26
https://doi.org/10.1109/iciprm.2019.8819001
https://doi.org/10.1109/iciprm.2019.8819001
Publikováno v:
2018 IEEE Photonics Conference (IPC).
We report on the design and epitaxy of AlGaN nanowire photonic crystal LEDs. The light extraction efficiency can, in principle, reach >90% for TM polarized emission. We have demonstrated AlGaN nanowire photonic crystal LEDs at 280 nm with output powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::197531959b6c4ea5b3eeb029abbbde55
https://doi.org/10.1109/ipcon.2018.8527171
https://doi.org/10.1109/ipcon.2018.8527171
Publikováno v:
SPIE Proceedings.
Although solar cells can meet the increasing demand for energy of modern world, their usage is not as widespread as expected because of their high production cost and low efficiency. Thin-film and ultra-thin-film solar cells with single and multiple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c350b83c8c1f4c888e23399909e93e87
https://doi.org/10.1117/12.2251165
https://doi.org/10.1117/12.2251165