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Autor:
Pramod K. Singh, R. S. N. Gongo, K. Y. Varma, Kishore Bantupalli, Santosh K Gedela, Kundan Kumar Suman
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
Very high output power level is achieved at microwave frequencies using Gallium Nitride technologies due to high breakdown voltage, high current density and high carrier mobility in AlGaN/GaN based High Electron Mobility Transistors. The specific 0.4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4088f1080cf04aab33011ccff1fe957
https://doi.org/10.23919/eumic.2019.8909397
https://doi.org/10.23919/eumic.2019.8909397
